Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress

1987 ◽  
Vol 51 (6) ◽  
pp. 433-435 ◽  
Author(s):  
Hidetsugu Uchida ◽  
Tsuneo Ajioka
Keyword(s):  
Electron Trap ◽  
Trap Center ◽  
Hole Trapping ◽  
Nordheim Tunneling

Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al2O3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

2006 ◽  
Vol 933 ◽  
Author(s):  
Chang-Hyun Lee ◽  
Changseok Kang ◽  
Yoocheol Shin ◽  
Jaesung Sim ◽  
Jongsun Sel ◽  
...  
Keyword(s):  
Energy Level ◽  
Threshold Voltage ◽  
Charge Trapping ◽  
Memory Cell ◽  
Floating Gate ◽  
Hole Trap ◽  
Hole Trapping ◽  
High K ◽  
Charge Trapping Memory ◽  
Nordheim Tunneling

ABSTRACTWe present the TANOS (Si-Oxide-SiN-Al2O3-TaN) cell with 40 Å-thick tunnel oxide erased by Fowler-Nordheim (FN) tunneling of hole. Thanks to introducing high-k dielectrics, alumina (Al2O3) as a blocking oxide, the erase threshold voltage can be maintained to less than - 3.0 V, meaning hole-trapping in SiN. We extracted the nitride trap densities of electron and hole for the TANOS cell. It is demonstrated that the TANOS structure is very available to investigate the trap density with shallower energy. The energy level of hole trap (1.28 eV) is found to be deeper than that of electron (0.8 eV). As the cycling stress is performed, persistent hole-trapping is observed unlike endurance characteristics of conventional floating-gate cell. The hole trapping during the cycling stress can be attributed to two possibilities. The injected holes are trapped in neutral trap of tunnel oxide and residue of holes which is not somewhat compensated by injected electrons may be accumulated in SiN. It is demonstrated the erase operation of the TANOS cell is governed by Fowler-Nordheim tunneling of hole due to the field concentration across the tunnel oxide.

Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy

2007 ◽  
Vol 101 (7) ◽  
pp. 073706 ◽  
Author(s):  
M. Asghar ◽  
I. Hussain ◽  
H. S. Noor ◽  
F. Iqbal ◽  
Q. Wahab ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Trap Center ◽  
Transient Spectroscopy

scholarly journals Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

2014 ◽  
Vol 6 (11) ◽  
pp. e143-e143 ◽  
Author(s):  
Ho-Hyun Nahm ◽  
Yong-Sung Kim
Keyword(s):  
Electron Trap ◽  
Trap Center

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Non-Visible Defect Analysis of OTP Device

2011 ◽  
Author(s):  
C.Q. Chen ◽  
G.B. Ang ◽  
Z.X. Xing ◽  
Y.N. Hua ◽  
Z.Q. Mo ◽  
...  
Keyword(s):  
Trap Center ◽  
Data Retention ◽  
Auger Analysis ◽  
Cross Sectional ◽  
Critical Dimensions ◽  
Charge Trap ◽  
Root Cause ◽  
Transmission Electron ◽  
Electrical Analysis ◽  
Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

Photoelectromotive Force (PEMF) Studies of [Fe(CN)5SCN]3- Complex Ions Adsorbed on Pb(SCN)2 Semiconductor Surfaces

2001 ◽  
Vol 66 (1) ◽  
pp. 81-88 ◽  
Author(s):  
Horst Hennig ◽  
Athanasios Kokorakis ◽  
Stefan Fränzle ◽  
Cornelia Damm ◽  
Franz W. Müller ◽  
...  
Keyword(s):  
Redox Reactions ◽  
Visible Region ◽  
Laser Flash ◽  
Semiconductor Surfaces ◽  
Spectral Sensitization ◽  
Complex Ions ◽  
Hole Trapping ◽  
Photoelectromotive Force

Adsorbates of [Fe(CN)5SCN]3- complex ions on semiconducting Pb(SCN)2 surfaces were subject to photoelectromotive force (PEMF) investigations. Laser flash excitation of the adsorbates at 560 nm yields a weak PEMF signal due to spectral sensitization of the semiconductor Pb(SCN)2, not absorbing in the visible region. PEMF signals observed with laser flash excitation at 337 nm are explained by hole trapping accompanied with photoinduced redox reactions of the complex, when the number of flashes is increased.

Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

2014 ◽  
Vol 32 (5) ◽  
pp. 050602 ◽  
Author(s):  
In-Hwan Lee ◽  
Alexander Y. Polyakov ◽  
Nikolai B. Smirnov ◽  
Cheol-Koo Hahn ◽  
S. J. Pearton
Keyword(s):  
Spatial Location ◽  
Electron Trap
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