Properties of dominant electron trap center in n-type SiC epilayers by means of deep level transient spectroscopy

2007 ◽  
Vol 101 (7) ◽  
pp. 073706 ◽  
Author(s):  
M. Asghar ◽  
I. Hussain ◽  
H. S. Noor ◽  
F. Iqbal ◽  
Q. Wahab ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Trap Center ◽  
Transient Spectroscopy

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

2017 ◽  
Vol 897 ◽  
pp. 279-282 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Maurizio Puzzanghera ◽  
Bengt Gunnar Svensson ◽  
Roberta Nipoti
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Electron Trap ◽  
Double Negative ◽  
Capture Cross ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Post Implantation

A vertical 4H-SiC p-i-n diode with 2×1020cm-3 Al+ implanted emitter and 1950°C/5min post implantation annealing has been characterized by deep level transient spectroscopy (DLTS). Majority (electron) and minority (hole) carrier traps have been found. Electron traps with a homogeneous depth profile, are positioned at 0.16, 0.67 and 1.5 eV below the minimum edge of the conduction band, and have 3×10-15, 1.7×1014, and 1.8×10-14 cm2 capture cross section, respectively. A hole trap decreasing in intensity with decreasing pulse voltage occurs at 0.35 eV above the maximum edge of the valence band with 1×1013 cm2 apparent capture cross section. The highest density is observed for the refractory 0.67 eV electron trap that is due to the double negative acceptor states of the carbon vacancy.

Investigation of Defect Concentration Distributions in Ion-Implanted and Annealed GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
K.L. Wang ◽  
G.P. Li ◽  
P.M. Asbeck ◽  
C.G. Kirkpatrick
Keyword(s):  
Ion Implantation ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Energy Levels ◽  
Reliable Data ◽  
Electron Trap ◽  
Bridgman Technique ◽  
Transient Spectroscopy ◽  
Anneal Temperature

ABSTRACTUncapped and Si3N4-capped annealing of GaAs grown with the horizontal Bridgman technique was investigated with deep-level transient spectroscopy. Electron trap concentration distributions were measured with a reduced noise DLTS system to ensure reliable data. Ion implantation using Se ions both prior to capping and through a Si3N4 cap was carried out. The evolution of defect energy levels and the changes in concentration distributions with anneal temperature were studied. It is concluded that the defects residing in the probed space-charge region can be annealed out with a Si3N4 cap at a temperature higher than 750 C.

scholarly journals Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

2005 ◽  
Vol 891 ◽  
Author(s):  
Steven W. Johnston ◽  
Sarah R. Kurtz ◽  
Richard S. Crandall
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Organic Chemical ◽  
Conduction Band Offset ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For all samples, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.25 to 0.35 eV. The minority-carrier trap density in the p-type material is quantified based on computer simulation of the devices. The simulations show that only about 2% of the traps in the depleted layer are filled during the transient. The fraction of the traps that are filled depends strongly on the depth of the trap, but only weakly on the doping of the layers and on the conduction-band offset. The simulations provide a pathway to obtain semi-quantitative data for analysis of minority-carrier traps by DLTS.

Point Defects in a Directly-Bonded Wafer, and its Comparison with the Bonded Soi Wafers

1993 ◽  
Vol 302 ◽  
Author(s):  
Akira Usami ◽  
Keisuke Kaneko ◽  
Akira Ito ◽  
Shun-ichiro Ishigami ◽  
Takao Wada
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Oxide Thickness ◽  
Electron Trap ◽  
Silicon On Insulator ◽  
Trap Concentration ◽  
Active Layers ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ABSTRACT<Directly-bonded wafers were characterized using capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. We also studied silicon on insulator (SOI) wafers with different interfacial oxide thicknesses. In the active layers of the directly bonded wafer, two dominant electron traps (Ec-0.16eV, Ec-0.24eV) were observed at 23 μμμμm from the bonded interface. Both trap densities are almost constant (about 2 × 1011cm−3) at distances larger than about 10 μm. In the substrate, the density of the shallower electron trap increases (about 8 × 1011 cm−3) within about 20 μm from the interface, while the other trap concentration is almost constant and nearly equal to that in the active layers. No trap was observed near the wafer backside. These traps were also observed in the bonded SO1 wafers. Both the trap concentrations depend on the thickness of the bonded interfacial oxide. The shallower trap concentration increases with increasing oxide thickness, and the deeper one decreases.

Effects of H+-Implantation On Electron Traps In N-Type Si Induced by P+ Pre-Implantation

1996 ◽  
Vol 442 ◽  
Author(s):  
Akira Ito ◽  
Hiroyuki Iwata ◽  
Yutaka Tokuda
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Electron Trap ◽  
Electron Traps ◽  
Vacancy Defects ◽  
Trap Concentration ◽  
Projected Range ◽  
Transient Spectroscopy

AbstractThe change of the concentration of electron traps in n-type Si induced by P+ implantation (300keV, l×109 cm−2) with subsequent H+-implantation has been studied by deep level transient spectroscopy. H+-implantation is performed at room temperature to a dose of 2×1010cm−2 in the range 30 to 120keV. First P+ implantation induces six electron traps (Ec-0.12, 0.15, 0.21, 0.26, 0.39, 0.49eV). H+-implantation additionally induces an electron trap (Ec-0.32eV) which is related to hydrogen. The subsequent H+-implantation partly decreases the concentration of the electron traps induced by P+ implantation, although it increases the concentrations near the H+ projected range. 30 keV H+-implantation is mdst effective to reduce the trap concentration. The reduction of the concentration of the traps is ascribed to the reaction of pre-existing defects with interstitial or vacancy defects formed by subsequent H+-implantation.

Capacitance Transient Analysis of Mbe Grown Gaas on Silicon Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
G. F. Burns ◽  
T. C. Chong ◽  
C. G. Fonstad
Keyword(s):  
Point Defect ◽  
Deep Level Transient Spectroscopy ◽  
Transient Analysis ◽  
Deep Level ◽  
Electron Trap ◽  
Silicon Substrates ◽  
Native Point Defect ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Activation Behavior

AbstractCapacitance transient spectroscopy has been applied to identify deep levels associated with heteroepitaxial GaAs grown on silicon. Results from p+n diode test structures reveal creation of the electron trap EL2 and a high density of hole states in the bandgap. This is the first reported observation of hole traps in MBE GaAs on Si. The activation behavior of the electron and hole signal peaks fits the signature of two different charge states associated with EL2, a native point defect complex seen in MOCVD, VPE, and bulk-grown GaAs, but not usually observed in MBE grown GaAs. Interstingly, the spectra seen show many similarities with earlier deep level transient spectroscopy (DLTS) observations on plastically deformed GaAs.

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