Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

ACS Nano ◽  
2013 ◽  
Vol 7 (9) ◽  
pp. 8258-8265 ◽  
Author(s):  
Yingjie Zhang ◽  
Dominik Ziegler ◽  
Miquel Salmeron
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy

2007 ◽  
Vol 46 (4B) ◽  
pp. 2496-2500 ◽  
Author(s):  
Takeo Umesaka ◽  
Hirofumi Ohnaka ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Force Microscopy

Tracking speed bumps in organic field-effect transistors via pump-probe Kelvin-probe force microscopy

2015 ◽  
Vol 118 (24) ◽  
pp. 244502 ◽  
Author(s):  
J. Murawski ◽  
T. Mönch ◽  
P. Milde ◽  
M. P. Hein ◽  
S. Nicht ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Pump Probe ◽  
Force Microscopy

POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 51-54 ◽  
Author(s):  
YUKI OKIGAWA ◽  
TAKEO UMESAKA ◽  
YUTAKA OHNO ◽  
SHIGERU KISHIMOTO ◽  
TAKASHI MIZUTANI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Potential Distribution ◽  
Field Effect Transistors ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Profile Measurement ◽  
Kelvin Probe ◽  
Force Detection ◽  
Force Microscopy

We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.

Detection of trapped charges in the blend films of polystyrene/SFDBAO electrets by electrostatic and Kelvin probe force microscopy

2016 ◽  
Vol 18 (14) ◽  
pp. 9412-9418 ◽  
Author(s):  
Jin Wang ◽  
Xiao Wang ◽  
Wen-Juan Xu ◽  
Ling-Hai Xie ◽  
Yu-Yu Liu ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Charge Trapping ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Blend Films ◽  
Force Microscopy ◽  
Sterically Hindered

The charge trapping properties of the blend of polystyrene (PS) and a sterically hindered organic semiconductor SFDBAO (spiro[fluorene-9,7-dibenzo[c,h]acridin-5-one]) are investigated by electrostatic and Kelvin probe force microscopy (EFM and KPFM).

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

2016 ◽  
Vol 389 ◽  
pp. 783-789 ◽  
Author(s):  
S.V. Kondratenko ◽  
V.S. Lysenko ◽  
Yu. N. Kozyrev ◽  
M. Kratzer ◽  
D.P. Storozhuk ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Local Charge
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