scholarly journals Research Update: Nanoscale surface potential analysis of MoS2 field-effect transistors for biomolecular detection using Kelvin probe force microscopy

APL Materials ◽  
2016 ◽  
Vol 4 (10) ◽  
pp. 100701 ◽  
Author(s):  
Min Hyung Kim ◽  
Heekyeong Park ◽  
Hyungbeen Lee ◽  
Kihwan Nam ◽  
Seokhwan Jeong ◽  
...  
Keyword(s):  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Biomolecular Detection ◽  
Potential Analysis ◽  
Force Microscopy

Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy

2007 ◽  
Vol 46 (4B) ◽  
pp. 2496-2500 ◽  
Author(s):  
Takeo Umesaka ◽  
Hirofumi Ohnaka ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Force Microscopy

scholarly journals Surface Potential Analysis of Nanoscale Biomaterials and Devices Using Kelvin Probe Force Microscopy

2016 ◽  
Vol 2016 ◽  
pp. 1-21 ◽  
Author(s):  
Hyungbeen Lee ◽  
Wonseok Lee ◽  
Jeong Hoon Lee ◽  
Dae Sung Yoon
Keyword(s):  
Electrical Properties ◽  
Surface Potential ◽  
Molecular Interactions ◽  
Material Science ◽  
Kelvin Probe Force Microscopy ◽  
Biomedical Science ◽  
Kelvin Probe ◽  
Potential Analysis ◽  
Force Microscopy ◽  
Properties Of Materials

In recent years, Kelvin probe force microscopy (KPFM) has emerged as a versatile toolkit for exploring electrical properties on a broad range of nanobiomaterials and molecules. An analysis using KPFM can provide valuable sample information including surface potential and work function of a certain material. Accordingly, KPFM has been widely used in the areas of material science, electronics, and biomedical science. In this review, we will briefly explain the setup of KPFM and its measuring principle and then survey representative results of various KPFM applications ranging from material analysis to device analysis. Finally, we will discuss some possibilities of KPFM on whether it is applicable to various sensor systems. Our perspective shed unique light on how KPFM can be used as a biosensor as well as equipment to measure electrical properties of materials and to recognize various molecular interactions.

Tracking speed bumps in organic field-effect transistors via pump-probe Kelvin-probe force microscopy

2015 ◽  
Vol 118 (24) ◽  
pp. 244502 ◽  
Author(s):  
J. Murawski ◽  
T. Mönch ◽  
P. Milde ◽  
M. P. Hein ◽  
S. Nicht ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Pump Probe ◽  
Force Microscopy

scholarly journals Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

2020 ◽  
Vol 11 ◽  
pp. 911-921
Author(s):  
Christian Ritz ◽  
Tino Wagner ◽  
Andreas Stemmer
Keyword(s):  
Frequency Shift ◽  
Surface Potential ◽  
Electrostatic Force ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Alternative Approach ◽  
Dc Component ◽  
Lock In

Kelvin probe force microscopy is a scanning probe technique used to quantify the local electrostatic potential of a surface. In common implementations, the bias voltage between the tip and the sample is modulated. The resulting electrostatic force or force gradient is detected via lock-in techniques and canceled by adjusting the dc component of the tip–sample bias. This allows for an electrostatic characterization and simultaneously minimizes the electrostatic influence onto the topography measurement. However, a static contribution due to the bias modulation itself remains uncompensated, which can induce topographic height errors. Here, we demonstrate an alternative approach to find the surface potential without lock-in detection. Our method operates directly on the frequency-shift signal measured in frequency-modulated atomic force microscopy and continuously estimates the electrostatic influence due to the applied voltage modulation. This results in a continuous measurement of the local surface potential, the capacitance gradient, and the frequency shift induced by surface topography. In contrast to conventional techniques, the detection of the topography-induced frequency shift enables the compensation of all electrostatic influences, including the component arising from the bias modulation. This constitutes an important improvement over conventional techniques and paves the way for more reliable and accurate measurements of electrostatics and topography.

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