Transit Phenomena in Organic Field-Effect Transistors Through Kelvin-Probe Force Microscopy

2013 ◽  
Vol 25 (31) ◽  
pp. 4315-4319 ◽  
Author(s):  
Christian Melzer ◽  
Christopher Siol ◽  
Heinz von Seggern
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Force Microscopy

Tracking speed bumps in organic field-effect transistors via pump-probe Kelvin-probe force microscopy

2015 ◽  
Vol 118 (24) ◽  
pp. 244502 ◽  
Author(s):  
J. Murawski ◽  
T. Mönch ◽  
P. Milde ◽  
M. P. Hein ◽  
S. Nicht ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Pump Probe ◽  
Force Microscopy

Surface Potential Measurement of Carbon Nanotube Field-Effect Transistors Using Kelvin Probe Force Microscopy

2007 ◽  
Vol 46 (4B) ◽  
pp. 2496-2500 ◽  
Author(s):  
Takeo Umesaka ◽  
Hirofumi Ohnaka ◽  
Yutaka Ohno ◽  
Shigeru Kishimoto ◽  
Koichi Maezawa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Potential Measurement ◽  
Force Microscopy

POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION

NANO ◽  
2008 ◽  
Vol 03 (01) ◽  
pp. 51-54 ◽  
Author(s):  
YUKI OKIGAWA ◽  
TAKEO UMESAKA ◽  
YUTAKA OHNO ◽  
SHIGERU KISHIMOTO ◽  
TAKASHI MIZUTANI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Potential Distribution ◽  
Field Effect Transistors ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Profile Measurement ◽  
Kelvin Probe ◽  
Force Detection ◽  
Force Microscopy

We have measured the potential distribution on carbon nanotube (CNT) field-effect transistors (FETs) using electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM). Clearer potential profiles were obtained by EFM than by KFM. When the CNT-FET is in the ON state, the EFM image shows uniform potential distribution along the CNT. In contrast, when the CNT-FET is in the OFF state, nonuniform potential image with dark spots are obtained. The dark spots can be attributed to the defects in the CNTs.

A new method to invert top-gate organic field-effect transistors for Kelvin probe investigations

2012 ◽  
Vol 112 (2) ◽  
pp. 431-436 ◽  
Author(s):  
L. A. Kehrer ◽  
E. J. Feldmeier ◽  
C. Siol ◽  
D. Walker ◽  
C. Melzer ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
New Method ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe

Kelvin-probe studies of n-conductive organic field-effect transistors during operation

2010 ◽  
Vol 7 (2) ◽  
pp. 452-455 ◽  
Author(s):  
Franziska Lüttich ◽  
Daniel Lehmann ◽  
Harald Graaf ◽  
Dietrich R. T. Zahn ◽  
Christian von Borczyskowski
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe

scholarly journals Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 882 ◽  
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Flexible Electronics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Depletion Region ◽  
In Situ Monitoring ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Metal Dichalcogenides

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices.

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