Subnanowatt Carbon Nanotube Complementary Logic Enabled by Threshold Voltage Control

Michael L. Geier; Pradyumna L. Prabhumirashi; Julian J. McMorrow; Weichao Xu; Jung-Woo T. Seo; Ken Everaerts; Chris H. Kim; Tobin J. Marks; Mark C. Hersam

doi:10.1021/nl402478p

Subnanowatt Carbon Nanotube Complementary Logic Enabled by Threshold Voltage Control

Nano Letters ◽

10.1021/nl402478p ◽

2013 ◽

Vol 13 (10) ◽

pp. 4810-4814 ◽

Cited By ~ 78

Author(s):

Michael L. Geier ◽

Pradyumna L. Prabhumirashi ◽

Julian J. McMorrow ◽

Weichao Xu ◽

Jung-Woo T. Seo ◽

...

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Voltage Control

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Polymer Encapsulants for Threshold Voltage Control in Carbon Nanotube Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.9b09857 ◽

2019 ◽

Vol 11 (39) ◽

pp. 36027-36034 ◽

Cited By ~ 2

Author(s):

François Lapointe ◽

Ashish Sapkota ◽

Jianfu Ding ◽

Jacques Lefebvre

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Voltage Control ◽

Carbon Nanotube Transistors ◽

Nanotube Transistors

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Threshold voltage control of carbon nanotube-based synaptic transistors via chemical doping for plasticity modulation and symmetry improvement

Carbon ◽

10.1016/j.carbon.2021.08.020 ◽

2021 ◽

Author(s):

Mingxu Song ◽

Yilin Sun ◽

Zhifang Liu ◽

Bo Wei ◽

Huaipeng Wang ◽

...

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Voltage Control ◽

Chemical Doping

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Oxide implantation for threshold voltage control

Microelectronics Reliability ◽

10.1016/0026-2714(91)90187-c ◽

1991 ◽

Vol 31 (5) ◽

pp. 1056

Keyword(s):

Threshold Voltage ◽

Voltage Control

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Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

Advanced Materials Interfaces ◽

10.1002/admi.201600713 ◽

2016 ◽

Vol 3 (24) ◽

pp. 1600713 ◽

Cited By ~ 8

Author(s):

Ji Hoon Park ◽

Fwzah H. Alshammari ◽

Zhenwei Wang ◽

Husam N. Alshareef

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Control ◽

Interface Engineering

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Cited By ~ 9

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Gate Oxide ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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Delay and Power Monitoring Schemes for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2006.870796 ◽

2006 ◽

Vol 41 (4) ◽

pp. 805-814 ◽

Cited By ~ 52

Author(s):

M. Nomura ◽

Y. Ikenaga ◽

K. Takeda ◽

Y. Nakazawa ◽

Y. Aimoto ◽

...

Keyword(s):

Power Consumption ◽

Threshold Voltage ◽

Voltage Control ◽

Power Monitoring

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The Concept of LDSI (Locally-Differentiated-Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano-Scale FETs

10.1063/1.2401462 ◽

2006 ◽

Cited By ~ 4

Author(s):

Min-Yong Lee ◽

S. W. Jin ◽

Y. S. Sohn ◽

S. K. Na ◽

K. B. Rouh ◽

...

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Voltage Control ◽

Nano Scale

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Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526478 ◽

2002 ◽

Cited By ~ 5

Author(s):

H. Shimada ◽

T. Ushiki ◽

Y. Hirano ◽

T. Ohmi

Keyword(s):

Low Power ◽

Threshold Voltage ◽

Voltage Control

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Threshold voltage variation for charge accumulation in carbon nanotube owing to monatomic defect arrangement

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.06ff04 ◽

2015 ◽

Vol 54 (6S1) ◽

pp. 06FF04

Author(s):

U Ishiyama ◽

Nguyen Thanh Cuong ◽

Susumu Okada

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Charge Accumulation ◽

Voltage Variation

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Study of Drain Induced Barrier Lowering (DIBL), Threshold Voltage Roll-Off (ΔVtroll-off) and Drain Current in Carbon Nanotube Field-Effect Transistor (CNTFET)

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0231509jss ◽

2015 ◽

Vol 4 (9) ◽

pp. M69-M72 ◽

Cited By ~ 6

Author(s):

Ajay Kumar Singh ◽

B. Naresh Kumar ◽

C. M. R. Prabhu

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Effect Transistor

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