The Concept of LDSI (Locally-Differentiated-Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano-Scale FETs

2006 ◽  
Author(s):  
Min-Yong Lee ◽  
S. W. Jin ◽  
Y. S. Sohn ◽  
S. K. Na ◽  
K. B. Rouh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Voltage Control ◽  
Nano Scale

Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

2016 ◽  
Vol 3 (24) ◽  
pp. 1600713 ◽  
Author(s):  
Ji Hoon Park ◽  
Fwzah H. Alshammari ◽  
Zhenwei Wang ◽  
Husam N. Alshareef
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Interface Engineering

Physical Mechanism of Threshold Voltage Modulation by Ge Channel Ion Implantation in the TiN/HfO2Gate Stack Systems

2011 ◽  
Vol 50 (6) ◽  
pp. 064201
Author(s):  
Yoshinori Tsuchiya ◽  
Nathaniel Berliner ◽  
Ryosuke Iijima ◽  
Leo Tai ◽  
Mariko Takayanagi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Physical Mechanism

Line edge roughness induced threshold voltage variability in nano-scale FinFETs

2017 ◽  
Vol 103 ◽  
pp. 304-313 ◽  
Author(s):  
Rituraj Singh Rathore ◽  
Rajneesh Sharma ◽  
Ashwani K. Rana
Keyword(s):  
Threshold Voltage ◽  
Line Edge Roughness ◽  
Nano Scale ◽  
Edge Roughness

Physical origin of pFET threshold voltage modulation by Ge channel ion implantation (GC-I/I)

2010 ◽  
Author(s):  
Yoshinori Tsuchiya ◽  
Nathaniel Berliner ◽  
Ryosuke Iijima ◽  
Frederic Monsieur ◽  
Leo Tai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Physical Origin
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