Threshold voltage variation for charge accumulation in carbon nanotube owing to monatomic defect arrangement

2015 ◽  
Vol 54 (6S1) ◽  
pp. 06FF04
Author(s):  
U Ishiyama ◽  
Nguyen Thanh Cuong ◽  
Susumu Okada
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Charge Accumulation ◽  
Voltage Variation

scholarly journals Ground Plane Impact on Performance of Relaxed Ge FinFETs

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Alberto Vinícius Oliveira ◽  
Guilherme Vieira Gonçalves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Jérôme Mitard ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Doping Concentration ◽  
Ground Plane ◽  
Subthreshold Swing ◽  
Voltage Variation ◽  
Electrostatic Coupling ◽  
P Type ◽  
Aided Design ◽  
Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

Pulse Dependent Threshold Voltage Variation of the Ovonic Threshold Switch in Cross-Point Memory

2020 ◽  
Vol 41 (3) ◽  
pp. 373-376
Author(s):  
Sanghyun Ban ◽  
Hyejung Choi ◽  
Wootae Lee ◽  
Seokman Hong ◽  
Hwanjun Zang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Cross Point ◽  
Voltage Variation ◽  
Threshold Switch

A study of the threshold voltage variation for ultra-small bulk and SOI CMOS

2001 ◽  
Vol 48 (9) ◽  
pp. 1995-2001 ◽  
Author(s):  
K. Takeuchi ◽  
R. Koh ◽  
T. Mogami
Keyword(s):  
Threshold Voltage ◽  
Voltage Variation ◽  
Soi Cmos

Uniform DNA Biosensors Based on Threshold Voltage of Carbon Nanotube Thin-Film Transistors

NANO ◽  
2016 ◽  
Vol 11 (05) ◽  
pp. 1650060 ◽  
Author(s):  
Yanyan Deng ◽  
Min Zhang ◽  
Fang Yuan ◽  
Zigang Li ◽  
Wenyu Zhou
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Standard Deviation ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Dna Biosensors ◽  
High Uniformity ◽  
First Time ◽  
Highly Uniform

Uniformity is a key parameter to assure the accuracy of biosensor devices. In this work, highly uniform carbon nanotube thin-film transistors (CNT-TFTs) with a standard deviation of threshold voltage ([Formula: see text]) as small as 0.04 were achieved by accurately controlling the fabrication process, which is so far the most stable distribution to our knowledge. On-state current ([Formula: see text]), off-state current and on/off current ratio also exhibit high uniformity with low standard deviation of 0.50, 0.72 and 0.54, respectively. Given the high uniformity, high stability and high sensitivity, the CNT-TFTs are used as ultra-sensitive 5-hydroxymethyl cytosine (5-hmC) detecting devices for the first time, which is one of the important modified bases in DNA and plays an important role in epigenetics. After attachment of 5-hmC DNA, a reproducible and stable shift of 18.7–59% in [Formula: see text] as well as a 31–54% change in [Formula: see text] were observed in the transfer characteristics curves of CNT-TFTs. Thus, a detecting device of 5-hmC in DNA segments could be designed based on the highly uniform CNT-TFTs.

Subnanowatt Carbon Nanotube Complementary Logic Enabled by Threshold Voltage Control

Nano Letters ◽  
2013 ◽  
Vol 13 (10) ◽  
pp. 4810-4814 ◽  
Author(s):  
Michael L. Geier ◽  
Pradyumna L. Prabhumirashi ◽  
Julian J. McMorrow ◽  
Weichao Xu ◽  
Jung-Woo T. Seo ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Threshold Voltage ◽  
Voltage Control

Design Considerations for PD/SOI SRAM: Impact of Gate Leakage and Threshold Voltage Variation

2008 ◽  
Vol 21 (1) ◽  
pp. 33-40 ◽  
Author(s):  
Rouwaida Kanj ◽  
Rajiv V. Joshi ◽  
Jayakumaran Sivagnaname ◽  
Jente B. Kuang ◽  
Dhruva Acharyya ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Leakage ◽  
Design Considerations ◽  
Voltage Variation
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