Direct Measurements of Lateral Variations of Schottky Barrier Height Across “End-On” Metal Contacts to Vertical Si Nanowires by Ballistic Electron Emission Microscopy

Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 694-698 ◽  
Author(s):  
Wei Cai ◽  
Yulu Che ◽  
Jonathan P. Pelz ◽  
Eric R. Hemesath ◽  
Lincoln J. Lauhon
Keyword(s):  
Schottky Barrier ◽  
Electron Emission ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
Ballistic Electron Emission Microscopy ◽  
Si Nanowires ◽  
Ballistic Electron ◽  
Direct Measurements ◽  
Emission Microscopy ◽  
Lateral Variations

Lateral Variation in the Schottky Barrier Height and Observation of Critical Lengths at Au/PtSi/(100)Si and Au/(100)GaAs Diodes

1994 ◽  
Vol 337 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams ◽  
Brent A. Morgan ◽  
Ken M. Ring ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Critical Length ◽  
Spatial Inhomogeneity ◽  
Length Scale ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
The Difference ◽  
Lateral Variations

ABSTRACTLateral variations in the Schottky barrier height (SBH) formed at Au/PtSi/(100)Si and Au/(100)GaAs diodes were measured on length scales ranging from a few to several hundred nanometers using ballistic electron emission microscopy (BEEM). All of the contacts investigated showed SBH spatial inhomogeneity. The most severe SBH variations observed were 0.09eV/0.7nm in Au/(100)GaAs contacts and 0.08eV/14nm for Au/PtSi/(100)Si contacts. Based on the lateral maps of the SBH at each interface, the difference between the locally averaged SBH and the globally averaged BEEM SBH was computed. This analysis showed that there is a critical diode length scale below which the SBH deviates significantly from the SBH averaged over a macroscopic length scale. This result implies that the uniformity of electrical characteristics of arrays of small devices (e.g.. PtSi/Si photodetectors and GaAs FET gates) can be expected to deteriorate significantly when device dimensions decrease below the critical length.

Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy

2000 ◽  
Vol 76 (13) ◽  
pp. 1725-1727 ◽  
Author(s):  
L. D. Bell ◽  
R. P. Smith ◽  
B. T. McDermott ◽  
E. R. Gertner ◽  
R. Pittman ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Emission Microscopy
Sign in / Sign up

Export Citation Format

Share Document