Lateral Variation in the Schottky Barrier Height and Observation of Critical Lengths at Au/PtSi/(100)Si and Au/(100)GaAs Diodes

1994 ◽  
Vol 337 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams ◽  
Brent A. Morgan ◽  
Ken M. Ring ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Critical Length ◽  
Spatial Inhomogeneity ◽  
Length Scale ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
The Difference ◽  
Lateral Variations

ABSTRACTLateral variations in the Schottky barrier height (SBH) formed at Au/PtSi/(100)Si and Au/(100)GaAs diodes were measured on length scales ranging from a few to several hundred nanometers using ballistic electron emission microscopy (BEEM). All of the contacts investigated showed SBH spatial inhomogeneity. The most severe SBH variations observed were 0.09eV/0.7nm in Au/(100)GaAs contacts and 0.08eV/14nm for Au/PtSi/(100)Si contacts. Based on the lateral maps of the SBH at each interface, the difference between the locally averaged SBH and the globally averaged BEEM SBH was computed. This analysis showed that there is a critical diode length scale below which the SBH deviates significantly from the SBH averaged over a macroscopic length scale. This result implies that the uniformity of electrical characteristics of arrays of small devices (e.g.. PtSi/Si photodetectors and GaAs FET gates) can be expected to deteriorate significantly when device dimensions decrease below the critical length.

Ab Initio Study of SiC/Metal Polar Interfaces: Relation Between Interface Structure and Schottky-Barrier Height

2000 ◽  
Vol 640 ◽  
Author(s):  
Shingo Tanaka ◽  
Masanori Kohyama
Keyword(s):  
Ab Initio ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Adhesive Energy ◽  
Work Functions ◽  
The Difference ◽  
Cubic Silicon Carbide ◽  
The Relationship ◽  
Dynamics Method

ABSTRACTAb initio calculations of the polar interfaces between thin films of titanium and cubic silicon-carbide (SiC) have been performed by using the first-principles molecular dynamics method. Stable configurations, adhesive energies and Schottky-barrier height (SBH) for the Si-terminated and the C-terminated interfaces are obtained. The C-terminated interface has covalent C-Ti bonds, while the Si-terminated interface has shown metallic nature. Adhesive energy/SBH of the C-terminated interface is larger/smaller than that of the Si-terminated one, respectively. In order to examine a conventional SBH model, work functions of SiC slab with Si and with C surface and Ti slab have been calculated and SBHs have been estimated from the difference of work functions. In estimated SBHs between the interfaces, the relationship depend on the crystal orientation as (111) and (001).

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

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