Cross-sectional ballistic electron emission microscopy for Schottky barrier height profiling on heterostructures

2005 ◽  
Vol 86 (20) ◽  
pp. 202112 ◽  
Author(s):  
D. Rakoczy ◽  
G. Strasser ◽  
J. Smoliner
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electron Emission ◽  
Schottky Barrier Height ◽  
Ballistic Electron Emission Microscopy ◽  
Cross Sectional ◽  
Ballistic Electron ◽  
Emission Microscopy

Lateral Variation in the Schottky Barrier Height and Observation of Critical Lengths at Au/PtSi/(100)Si and Au/(100)GaAs Diodes

1994 ◽  
Vol 337 ◽  
Author(s):  
A. Alec Talin ◽  
Tue Ngo ◽  
R. Stanley Williams ◽  
Brent A. Morgan ◽  
Ken M. Ring ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Critical Length ◽  
Spatial Inhomogeneity ◽  
Length Scale ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
The Difference ◽  
Lateral Variations

ABSTRACTLateral variations in the Schottky barrier height (SBH) formed at Au/PtSi/(100)Si and Au/(100)GaAs diodes were measured on length scales ranging from a few to several hundred nanometers using ballistic electron emission microscopy (BEEM). All of the contacts investigated showed SBH spatial inhomogeneity. The most severe SBH variations observed were 0.09eV/0.7nm in Au/(100)GaAs contacts and 0.08eV/14nm for Au/PtSi/(100)Si contacts. Based on the lateral maps of the SBH at each interface, the difference between the locally averaged SBH and the globally averaged BEEM SBH was computed. This analysis showed that there is a critical diode length scale below which the SBH deviates significantly from the SBH averaged over a macroscopic length scale. This result implies that the uniformity of electrical characteristics of arrays of small devices (e.g.. PtSi/Si photodetectors and GaAs FET gates) can be expected to deteriorate significantly when device dimensions decrease below the critical length.

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