Electrophysical Characteristics of Tantalum Oxide Structures
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In this work has been developed a technology for obtaining nickel-insulator-aluminum structure with 7 nm thick tantalum oxide deposited by atomic-layer deposition. An asymmetric current-voltage characteristic of the structure is obtained, and the heights of potential barriers at the metal-insulator interface are determined. The permittivity of the tantalum oxide film has been determined experimentally in this work.
1986 ◽
Vol 403
(1825)
◽
pp. 285-311
◽
1997 ◽
Vol 36
(Part 1, No. 12A)
◽
pp. 7334-7336
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