Surface and Bulk Oxygen Vacancy Defect States near the Fermi Level in 125 nm WO3−δ/TiO2(110) Films: A Resonant Valence Band Photoemission Spectroscopy Study

2011 ◽  
Vol 115 (33) ◽  
pp. 16411-16417 ◽  
Author(s):  
Artur Braun ◽  
Selma Erat ◽  
Xiaojun Zhang ◽  
Qianli Chen ◽  
Tzu-Wen Huang ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Fermi Level ◽  
Valence Band ◽  
Vacancy Defect ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Defect States ◽  
Bulk Oxygen

Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution

1991 ◽  
Vol 43 (18) ◽  
pp. 14581-14588 ◽  
Author(s):  
F. Proix ◽  
C. A. Sébenne ◽  
B. El Hafsi ◽  
K. Hricovini ◽  
R. Pinchaux ◽  
...  
Keyword(s):  
Valence Band ◽  
Atomic Hydrogen ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Ultraviolet Photoemission Spectroscopy

Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy

2012 ◽  
Vol 27 (6) ◽  
pp. 065021 ◽  
Author(s):  
Olivia M Berengue ◽  
Mariana K Kanashiro ◽  
Adenilson J Chiquito ◽  
Cleocir J Dalmaschio ◽  
Edson R Leite
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Defect States ◽  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy

Electron Spectroscopic Studies of Substoichiometric Tantalum Carbide

1985 ◽  
Vol 48 ◽  
Author(s):  
G. R. Gruzalski ◽  
D. M. Zehner ◽  
G. W. Ownby
Keyword(s):  
Charge Transfer ◽  
Binding Energy ◽  
Fermi Level ◽  
Valence Band ◽  
Spectroscopic Studies ◽  
Tantalum Carbide ◽  
Binding Energies ◽  
Defect States ◽  
Valence Band Structure ◽  
Band Spectra

ABSTRACTXPS was used to determine core-level binding energies and valence-band structure for TaCx over the range 0.5 ≲ × ≲ 1.0. As x decreased, the carbonls binding energy (BE) changed very little, the carbon-2s BE shifted toward the Fermi level, the position of the p-d valence-band peak shifted toward the Fermi level more, and the tantalum-4d and -4f BE's shifted toward the Fermi level even more, about 0.16 eV for a change in × of 0.1. In addition, the valence-band spectra exhibited structure between about 1 and 2 eV BE, and this structure increased as x decreased. These observations are explicable in terms of charge transfer and the formation of occupied defect states associated with carbon vacancies.

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

Electronic structure of Al-Cr-Fe intermetallics

2003 ◽  
Vol 805 ◽  
Author(s):  
Esther Belin-Ferré ◽  
Zoltan Dankhazi ◽  
Marie-Françoise Fontaine ◽  
Jean Thirion ◽  
Marie-Cécile de Weerd ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Quasicrystalline Phase ◽  
Repulsive Interaction ◽  
Transition Elements ◽  
X Ray ◽  
Close Vicinity ◽  
Fe Intermetallics

ABSTRACTWe report here the results obtained for the valence band of four compounds from the Al-Cr-Fe system, all being approximants of the decagonal quasicrystalline phase as probed by a combination of X-ray emission and X-ray photoemission spectroscopy techniques. Salient features are d-d and p-d hybridizations at the Fermi level and in its close vicinity as well as a repulsive interaction between the d states of the two transition elements. Within about 4 eV below the Fermi level Al states are suggested to be of more localized-like character in the Al-Cr-Fe samples than in Al-Cu-Fe ones.

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
Ming Tang ◽  
David W. Niles ◽  
Isaac Hernández-Calderón ◽  
Hartmut Hóchst
Keyword(s):  
Synchrotron Radiation ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Photoemission Spectroscopy ◽  
Mbe Growth ◽  
Band Maximum ◽  
Interface Growth ◽  
Interfacial Growth ◽  
Photoemission Study

ABSTRACTAngular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

scholarly journals Role of oxygen vacancy defect states in then-type conduction of β-Ga2O3

1999 ◽  
Vol 86 (7) ◽  
pp. 3792-3796 ◽  
Author(s):  
Zoltán Hajnal ◽  
József Miró ◽  
Gábor Kiss ◽  
Ferenc Réti ◽  
Péter Deák ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Defect States ◽  
Type Conduction
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