scholarly journals Role of oxygen vacancy defect states in then-type conduction of β-Ga2O3

1999 ◽  
Vol 86 (7) ◽  
pp. 3792-3796 ◽  
Author(s):  
Zoltán Hajnal ◽  
József Miró ◽  
Gábor Kiss ◽  
Ferenc Réti ◽  
Péter Deák ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Defect States ◽  
Type Conduction

Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy

2012 ◽  
Vol 27 (6) ◽  
pp. 065021 ◽  
Author(s):  
Olivia M Berengue ◽  
Mariana K Kanashiro ◽  
Adenilson J Chiquito ◽  
Cleocir J Dalmaschio ◽  
Edson R Leite
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Defect States ◽  
Thermally Stimulated Current ◽  
Thermally Stimulated Current Spectroscopy

scholarly journals Role of Chemistry and Crystal Structure on the Electronic Defect States in Cs-Based Halide Perovskites

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1032
Author(s):  
Anirban Naskar ◽  
Rabi Khanal ◽  
Samrat Choudhury
Keyword(s):  
Crystal Structure ◽  
Density Functional ◽  
Covalent Bond ◽  
Density Functional Theory Calculations ◽  
Antisite Defect ◽  
Defect States ◽  
Functional Theory ◽  
Electronic Defect ◽  
Constituent Elements

The electronic structure of a series perovskites ABX3 (A = Cs; B = Ca, Sr, and Ba; X = F, Cl, Br, and I) in the presence and absence of antisite defect XB were systematically investigated based on density-functional-theory calculations. Both cubic and orthorhombic perovskites were considered. It was observed that for certain perovskite compositions and crystal structure, presence of antisite point defect leads to the formation of electronic defect state(s) within the band gap. We showed that both the type of electronic defect states and their individual energy level location within the bandgap can be predicted based on easily available intrinsic properties of the constituent elements, such as the bond-dissociation energy of the B–X and X–X bond, the X–X covalent bond length, and the atomic size of halide (X) as well as structural characteristic such as B–X–B bond angle. Overall, this work provides a science-based generic principle to design the electronic states within the band structure in Cs-based perovskites in presence of point defects such as antisite defect.

On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H

2000 ◽  
Vol 609 ◽  
Author(s):  
Paul Stradins ◽  
Akihisa Matsuda
Keyword(s):  
Particle Number ◽  
Defect States ◽  
Total Electron ◽  
Minority Carrier Diffusion Length ◽  
Continuity Equations ◽  
Effective Mobility ◽  
Almost All ◽  
Charged Defects ◽  
And Diffusion

ABSTRACTThe drift and diffusion in the presence of charged defects and photocarriers trapped in the tail states is re-examined. In continuity equations, diffusive and drift currents are related to free particles while the Poisson equation includes all charges. In order to make use of ambipolar diffusion approximation, the mobilities and diffusion coefficients should be attributed to the total electron and hole populations making them strongly particle-number dependent. Due to the asymmetry of the conduction and valence band tails, almost all trapped electrons reside in negatively charged defects (D−). A simple model of photocarrier traffic via tail and defect states allows to establish the effective mobility values and coefficients in Einstein relations. In a photocarrier grating experiment, grating of D− is counterbalanced by the grating of trapped holes. Nevertheless, electrons remain majority carriers, allowing the measurement of minority carrier diffusion length, but analysis is needed to relate the latter with μτ product.

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