Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution

1991 ◽  
Vol 43 (18) ◽  
pp. 14581-14588 ◽  
Author(s):  
F. Proix ◽  
C. A. Sébenne ◽  
B. El Hafsi ◽  
K. Hricovini ◽  
R. Pinchaux ◽  
...  
Keyword(s):  
Valence Band ◽  
Atomic Hydrogen ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Ultraviolet Photoemission Spectroscopy

Valence band ultraviolet photoemission spectroscopy of Dy/W(100)

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 429-433 ◽  
Author(s):  
N Moslemzadeh ◽  
S.D Barrett ◽  
V.R Dhanak ◽  
G Miller
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy

Ultraviolet Photoemission Spectroscopy Study of As-grown MgB2 Film

2006 ◽  
Author(s):  
Y. Harada ◽  
Y. Nakanishi ◽  
S. Tsuda ◽  
T. Takahashi ◽  
H. Iriuda ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
Mgb2 Film ◽  
Ultraviolet Photoemission Spectroscopy

A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst
Keyword(s):  
Fermi Level ◽  
Epitaxial Growth ◽  
Valence Band ◽  
Surface State ◽  
Photoemission Spectroscopy ◽  
Fermi Level Position ◽  
Ultraviolet Photoemission Spectroscopy ◽  
Photoemission Study ◽  
Valence Band Discontinuity

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

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