Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

2000 ◽  
Vol 76 (21) ◽  
pp. 3118-3120 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

Electron Transport Properties in Photo and Supersonic Wave Irradiated C60Fullerene Nano-Whisker Field-Effect Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DN12 ◽  
Author(s):  
Tatsuya Doi ◽  
Kyouhei Koyama ◽  
Yasuto Chiba ◽  
Hajime Tsuji ◽  
Misaki Ueno ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Transport Properties

scholarly journals Optimized Liquid-Phase Exfoliation of Magnetic van der Waals Heterostructures: Towards the Single Layer and Deterministic Fabrication of Devices

Molecules ◽  
2021 ◽  
Vol 26 (23) ◽  
pp. 7371
Author(s):  
Lucía Martín-Pérez ◽  
Enrique Burzurí
Keyword(s):  
Electron Transport ◽  
Liquid Phase ◽  
Transport Properties ◽  
Magnetic Materials ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Device Fabrication ◽  
Electron Transport Properties ◽  
Liquid Phase Exfoliation

Van der Waals magnetic materials are promising candidates for spintronics and testbeds for exotic magnetic phenomena in low dimensions. The two-dimensional (2D) limit in these materials is typically reached by mechanically breaking the van der Waals interactions between layers. Alternative approaches to producing large amounts of flakes rely on wet methods such as liquid-phase exfoliation (LPE). Here, we report an optimized route for obtaining monolayers of magnetic cylindrite by LPE. We show that the selection of exfoliation times is the determining factor in producing a statistically significant amount of monolayers while keeping relatively big flake areas (~1 µm2). We show that the cylindrite lattice is preserved in the flakes after LPE. To study the electron transport properties, we have fabricated field-effect transistors based on LPE cylindrite. Flakes are deterministically positioned between nanoscale electrodes by dielectrophoresis. We show that dielectrophoresis can selectively move the larger flakes into the devices. Cylindrite nanoscale flakes present a p-doped semiconducting behaviour, in agreement with the mechanically exfoliated counterparts. Alternating current (AC) admittance spectroscopy sheds light on the role played by potential barriers between different flakes in terms of electron transport properties. The present large-scale exfoliation and device fabrication strategy can be extrapolated to other families of magnetic materials.

Bipolar Charge Transport Properties in Air-Stable Organic Heterostructure Field-Effect Transistors

2008 ◽  
Author(s):  
Chin-Ti Chen ◽  
Shun-Wei Liu ◽  
Jia-Cing Huang ◽  
Wei-Cheng Su ◽  
Chih-Chien Lee Lee ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Bipolar Charge

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

2011 ◽  
Vol 679-680 ◽  
pp. 678-681 ◽  
Author(s):  
Harsh Naik ◽  
T. Paul Chow
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Gate Oxides ◽  
Electron Transport Properties

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

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