General Space-Confined On-Substrate Fabrication of Thickness-Adjustable Hybrid Perovskite Single-Crystalline Thin Films

2016 ◽  
Vol 138 (50) ◽  
pp. 16196-16199 ◽  
Author(s):  
Yao-Xuan Chen ◽  
Qian-Qing Ge ◽  
Yang Shi ◽  
Jie Liu ◽  
Ding-Jiang Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystalline ◽  
General Space ◽  
Hybrid Perovskite

A universal top-down approach toward thickness-controllable perovskite single-crystalline thin films

2018 ◽  
Vol 6 (16) ◽  
pp. 4464-4470 ◽  
Author(s):  
Qianrui Lv ◽  
Zhipeng Lian ◽  
Wenhui He ◽  
Jia-Lin Sun ◽  
Qiang Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Bulk Single Crystal ◽  
Top Down ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Hybrid Perovskite ◽  
Single Crystalline Film

A facile and general top-down strategy to fabricate hybrid perovskite single-crystalline film from its bulk single crystal is developed.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

scholarly journals The thin film bulk acoustic wave resonator based on single-crystalline 43○Y-cut lithium niobate thin films

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Lu Lv ◽  
Ying Xing ◽  
Jiaoling Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lithium Niobate ◽  
Acoustic Wave ◽  
Bulk Acoustic Wave ◽  
Single Crystalline ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk

Controlling nucleation, growth, and orientation of metal halide perovskite thin films with rationally selected additives

2017 ◽  
Vol 5 (1) ◽  
pp. 113-123 ◽  
Author(s):  
Benjamin J. Foley ◽  
Justin Girard ◽  
Blaire A. Sorenson ◽  
Alexander Z. Chen ◽  
J. Scott Niezgoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Nucleation And Growth ◽  
Metal Halide ◽  
Hybrid Perovskite ◽  
Metal Halide Perovskite ◽  
Halide Perovskite ◽  
Nucleation Growth

Impact of rationally selected additives in precursor solutions on the nucleation and growth of hybrid perovskite thin films is investigated.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Long-distance spin current transmission in single-crystalline NiO thin films

2021 ◽  
Author(s):  
Tetsuya Ikebuchi ◽  
Yuta Kobayashi ◽  
Itaru Sugiura ◽  
Yoichi Shiota ◽  
Teruo ONO ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Current ◽  
Long Distance ◽  
Single Crystalline ◽  
Current Transmission
Sign in / Sign up

Export Citation Format

Share Document