Near-Room-Temperature Thermal Chemical Vapor Deposition of Poly(chloro-p-xylylene)/SiO2Nanocomposites

1999 ◽  
Vol 11 (7) ◽  
pp. 1814-1821 ◽  
Author(s):  
Jay J. Senkevich ◽  
Seshu B. Desu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition

1993 ◽  
Vol 298 ◽  
Author(s):  
J.C. Sturm ◽  
X. Xiao ◽  
Q. Mi ◽  
L.C. Lenchyshyn ◽  
M.L.W. Thewalt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Electron Hole ◽  
Strained Si ◽  
Thermal Chemical Vapor Deposition ◽  
Shallow Impurity

AbstractWell-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex. heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex. is found to be the reason for reduced PL and EL at high temperature.

Rapid Thermal Chemical Vapor Deposition of Titanium Nitride for Barrier Application

1994 ◽  
Vol 342 ◽  
Author(s):  
B. Fröschle ◽  
R. Leutenecker ◽  
U. Cao-Minh ◽  
P. Ramm
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Specific Resistivity ◽  
Thermal Chemical Vapor Deposition ◽  
Anneal Temperature

ABSTRACTToday there are many investigations of titanium nitride (TiN) deposition as diffusion barriers in microelectronics, especially with Chemical Vapor Deposition (CVD) techniques. In our newly developed Rapid Thermal CVD (RTCVD) process, we combine the conventional LPCVD process of TiN using titanium (IV) chloride and ammonia with the advantages of a RTCVD reactor. With regard to the ability of fast temperature change especially to reach the anneal temperature and to cool down to room temperature in the annealing ambient, it is possible to perform the entire processing sequence within one single processing chamber. The influences of deposition temperature, as well as the effects of the temperature during a subsequent in situ anneal step on the properties of the layers is analyzed. TiN layers with a specific resistivity as low as 250 μΩ-cm even at deposition temperatures of 450 °C are obtained. The resistivity of the layers and the chlorine content is nearly half of the films without an anneal step. The capability of these layers for ULSI application is shown by depositing TiN in submicron contact holes with a step coverage of nearly 100 %.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

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