scholarly journals Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide

2012 ◽  
Vol 12 (10) ◽  
pp. 4703-4707 ◽  
Author(s):  
Shinya Yamada ◽  
Kohei Tanikawa ◽  
Masanobu Miyao ◽  
Kohei Hamaya
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline ◽  
Germanium Films ◽  
Crystalline Germanium

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

2017 ◽  
Vol 70 ◽  
pp. 68-72 ◽  
Author(s):  
Kenji Kasahara ◽  
Hidenori Higashi ◽  
Mario Nakano ◽  
Yuta Nagatomi ◽  
Keisuke Yamamoto ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Post Annealing ◽  
Germanium Films ◽  
Crystalline Germanium

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

Epitaxial Growth of Well-Aligned Single-Crystalline VO2 Micro/Nanowires Assisted by Substrate Facet Confinement

2018 ◽  
Vol 18 (7) ◽  
pp. 3896-3901 ◽  
Author(s):  
Liangxin Wang ◽  
Hui Ren ◽  
Shi Chen ◽  
Yuliang Chen ◽  
Bowen Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline

scholarly journals Epitaxial Growth of Optically Thick, Single Crystalline Silver Films for Plasmonics

2019 ◽  
Vol 11 (3) ◽  
pp. 3189-3195 ◽  
Author(s):  
Fei Cheng ◽  
Chien-Ju Lee ◽  
Junho Choi ◽  
Chun-Yuan Wang ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silver Films ◽  
Single Crystalline

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Crystalline Films ◽  
Single Crystalline Film

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

The epitaxial growth of germanium films onto NaCl/mica substrates

1981 ◽  
Vol 78 (4) ◽  
pp. 343-348 ◽  
Author(s):  
M. Barkai ◽  
E. Grünbaum ◽  
G. Deutscher
Keyword(s):  
Epitaxial Growth ◽  
Germanium Films

Single Crystalline Germanium-Lead Formed by Laser-Induced Epitaxy

2016 ◽  
Vol 5 (6) ◽  
pp. P353-P360 ◽  
Author(s):  
Qian Zhou ◽  
Edwin Bin Leong Ong ◽  
Sin Leng Lim ◽  
Saumitra Vajandar ◽  
Thomas Osipowicz ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Crystalline Germanium

Numerical Simulation and Prediction of Surface Heterogeneity in Diamond Turning of Single-Crystalline Germanium

2007 ◽  
Vol 329 ◽  
pp. 397-402
Author(s):  
Ji Wang Yan ◽  
Yu Feng Fan ◽  
Nobuhito Yoshihara ◽  
Tsunemoto Kuriyagawa ◽  
Shoji Yokoyama
Keyword(s):  
Numerical Simulation ◽  
Simulation Model ◽  
Surface Heterogeneity ◽  
Diamond Turning ◽  
Tool Geometry ◽  
Single Crystalline ◽  
Machining Conditions ◽  
Boundary Change ◽  
Systems Simulation ◽  
Crystalline Germanium

This paper deals with the mechanism of surface heterogeneity due to crystallographic anisotropy effects in diamond turning of single-crystalline germanium. A microplasticity-based numerical simulation model was proposed, in which the effects of tool geometry and machining conditions can be involved. Two coefficients were introduced to compensate the Schmid factors of two different types of symmetrical slip systems. Simulation of ductile machinability was conducted on two crystallographic planes (100) and (111), and the simulation results were consistent with the experimental results. It was indicated that the simulation model can be used to predict the brittle-ductile boundary change with machining conditions and crystal orientations of germanium.

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