scholarly journals Epitaxial Growth of Optically Thick, Single Crystalline Silver Films for Plasmonics

2019 ◽  
Vol 11 (3) ◽  
pp. 3189-3195 ◽  
Author(s):  
Fei Cheng ◽  
Chien-Ju Lee ◽  
Junho Choi ◽  
Chun-Yuan Wang ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silver Films ◽  
Single Crystalline

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

Epitaxial Growth of Well-Aligned Single-Crystalline VO2 Micro/Nanowires Assisted by Substrate Facet Confinement

2018 ◽  
Vol 18 (7) ◽  
pp. 3896-3901 ◽  
Author(s):  
Liangxin Wang ◽  
Hui Ren ◽  
Shi Chen ◽  
Yuliang Chen ◽  
Bowen Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Crystalline Films ◽  
Single Crystalline Film

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

Aqueous Epitaxial Growth of ZnO on Single Crystalline Au Microplates

2013 ◽  
Vol 13 (3) ◽  
pp. 986-991 ◽  
Author(s):  
John H. Joo ◽  
Kathryn J. Greenberg ◽  
Mor Baram ◽  
David R. Clarke ◽  
Evelyn L. Hu
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline

HETEROEPITAXIAL GROWTH OF NOVEL SOI MATERIAL Si/γ-Al2O3/Si

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4271-4274 ◽  
Author(s):  
QI-YUAN WANG ◽  
LI-WEN TAN ◽  
JUN WANG ◽  
YUAN-HUAN YU ◽  
LAN-YING LIN
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Films ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Cvd Method ◽  
Mos Device

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si /γ- Al 2 O 3/ Si . First, single crystalline γ- Al 2 O 3(100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on γ- Al 2 O 3(100)/ Si (100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si /γ- Al 2 O 3(100)/ Si (100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si /γ- Al 2 O 3(100)/ Si (100) has been fabricated successfully and can be used for application of MOS device.

Sign in / Sign up

Export Citation Format

Share Document