Epitaxial Growth of Well-Aligned Single-Crystalline VO2 Micro/Nanowires Assisted by Substrate Facet Confinement

2018 ◽  
Vol 18 (7) ◽  
pp. 3896-3901 ◽  
Author(s):  
Liangxin Wang ◽  
Hui Ren ◽  
Shi Chen ◽  
Yuliang Chen ◽  
Bowen Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

2008 ◽  
Vol 600-603 ◽  
pp. 247-250 ◽  
Author(s):  
Yasuo Hirabayashi ◽  
Satoru Kaneko ◽  
Kensuke Akiyama
Keyword(s):  
Epitaxial Growth ◽  
Heating Rate ◽  
Smooth Surface ◽  
Early Stage ◽  
Low Pressure ◽  
Single Domain ◽  
Single Crystalline ◽  
Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

scholarly journals Epitaxial Growth of Optically Thick, Single Crystalline Silver Films for Plasmonics

2019 ◽  
Vol 11 (3) ◽  
pp. 3189-3195 ◽  
Author(s):  
Fei Cheng ◽  
Chien-Ju Lee ◽  
Junho Choi ◽  
Chun-Yuan Wang ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silver Films ◽  
Single Crystalline

Epitaxial growth of single-crystalline-film scintillators based on Tb3+-doped and Tb3+–Ce3+-codoped Gd1–xLuxAlO3 (x = 0–1) mixed perovskites

CrystEngComm ◽  
2019 ◽  
Vol 21 (9) ◽  
pp. 1433-1441 ◽  
Author(s):  
V. Gorbenko ◽  
T. Zorenko ◽  
K. Paprocki ◽  
F. Riva ◽  
P. A. Douissard ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Crystalline Film ◽  
Crystalline Films ◽  
Single Crystalline Film

The paper is dedicated to the development of scintillating screens based on the single crystalline films of singly Tb3+ and doubly Tb3+–Ce3+ doped Gd1–xLuxAlO3 (x = 0–1) perovskites grown onto YAlO3 substrates using the liquid phase epitaxy method.

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

Aqueous Epitaxial Growth of ZnO on Single Crystalline Au Microplates

2013 ◽  
Vol 13 (3) ◽  
pp. 986-991 ◽  
Author(s):  
John H. Joo ◽  
Kathryn J. Greenberg ◽  
Mor Baram ◽  
David R. Clarke ◽  
Evelyn L. Hu
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline

HETEROEPITAXIAL GROWTH OF NOVEL SOI MATERIAL Si/γ-Al2O3/Si

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4271-4274 ◽  
Author(s):  
QI-YUAN WANG ◽  
LI-WEN TAN ◽  
JUN WANG ◽  
YUAN-HUAN YU ◽  
LAN-YING LIN
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Films ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Cvd Method ◽  
Mos Device

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si /γ- Al 2 O 3/ Si . First, single crystalline γ- Al 2 O 3(100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on γ- Al 2 O 3(100)/ Si (100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si /γ- Al 2 O 3(100)/ Si (100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si /γ- Al 2 O 3(100)/ Si (100) has been fabricated successfully and can be used for application of MOS device.

Epitaxial growth of MnAs on single-crystalline Mn–Zn ferrite substrates

2000 ◽  
Vol 208 (1-4) ◽  
pp. 395-400 ◽  
Author(s):  
Takeshi Ikeda ◽  
Hiroshi Fujioka ◽  
Shinjiro Hayakawa ◽  
Kanta Ono ◽  
Masaharu Oshima ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystalline ◽  
Zn Ferrite
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