Direct writing of large-area micro/nano-structural arrays on single crystalline germanium substrates using femtosecond lasers

2017 ◽  
Vol 110 (25) ◽  
pp. 251901 ◽  
Author(s):  
Lin Li ◽  
Jun Wang
Keyword(s):  
Femtosecond Lasers ◽  
Direct Writing ◽  
Large Area ◽  
Single Crystalline ◽  
Germanium Substrates ◽  
Crystalline Germanium

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

scholarly journals Meyer-Rod Coated 2D Single-Crystalline Copper Nanoplate Film with Intensive Pulsed Light for Flexible Electrode

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 88
Author(s):  
Myeongjong Go ◽  
Asrar Alam ◽  
Ho Kwang Choie ◽  
Zhaoyang Zhong ◽  
Keun Hyung Lee ◽  
...  
Keyword(s):  
Systematic Study ◽  
Large Scale ◽  
Coating Process ◽  
Pulsed Light ◽  
Large Area ◽  
Flexible Electrode ◽  
Conductive Coatings ◽  
Single Crystalline ◽  
Rheological Behaviors ◽  
Industrial Coating

Copper is widely used because it is inexpensive, abundant, and highly conductive. However, most copper used in industrial coating processes is in the form of circular powder, which is problematic for large area, high conductive coatings. In this work, 2D single-crystalline Cu nanoplates (Cu NPLs) were synthesized and a systematic study on coating with large-scale Cu NPLs using a Meyer-rod coating process was performed. The rheological behaviors of the Cu solution with various concentrations, surface tensions, and speeds were analyzed using Ca and Re numbers to optimize coating conditions. In addition, the effect of intensive pulse light (IPL) to sinter the coper film within a 1 s timeframe was also investigated in order to be able to produce an electrode in the shortest possible time which is applicable to industry. Finally, the Meyer-rod coated electrode was utilized in an electrochemical luminescence (ECL) device.

Porous and Nanoporous Semiconductors and Emerging Applications

2005 ◽  
Vol 876 ◽  
Author(s):  
Helmut Föll ◽  
Jürgen Carstensen ◽  
Stefan Frey
Keyword(s):  
Optical Properties ◽  
Fuel Cells ◽  
Pore Formation ◽  
Large Area ◽  
Paper Briefly ◽  
High Explosives ◽  
Single Crystalline ◽  
Natural Materials ◽  
Porous Semiconductors ◽  
Wide Range

AbstractPores in single crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nano” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with e.g. optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, e.g. high explosives or electrodes for micro fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching), properties of porous semiconductors and emerging applications.

Single Crystalline Germanium-Lead Formed by Laser-Induced Epitaxy

2016 ◽  
Vol 5 (6) ◽  
pp. P353-P360 ◽  
Author(s):  
Qian Zhou ◽  
Edwin Bin Leong Ong ◽  
Sin Leng Lim ◽  
Saumitra Vajandar ◽  
Thomas Osipowicz ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Crystalline Germanium

Large-area nanoimprinting on various substrates by reconfigurable maskless laser direct writing

2012 ◽  
Vol 23 (34) ◽  
pp. 344012 ◽  
Author(s):  
Daeho Lee ◽  
Heng Pan ◽  
Alex Sherry ◽  
Seung Hwan Ko ◽  
Ming-Tsang Lee ◽  
...  
Keyword(s):  
Direct Writing ◽  
Laser Direct Writing ◽  
Large Area

Numerical Simulation and Prediction of Surface Heterogeneity in Diamond Turning of Single-Crystalline Germanium

2007 ◽  
Vol 329 ◽  
pp. 397-402
Author(s):  
Ji Wang Yan ◽  
Yu Feng Fan ◽  
Nobuhito Yoshihara ◽  
Tsunemoto Kuriyagawa ◽  
Shoji Yokoyama
Keyword(s):  
Numerical Simulation ◽  
Simulation Model ◽  
Surface Heterogeneity ◽  
Diamond Turning ◽  
Tool Geometry ◽  
Single Crystalline ◽  
Machining Conditions ◽  
Boundary Change ◽  
Systems Simulation ◽  
Crystalline Germanium

This paper deals with the mechanism of surface heterogeneity due to crystallographic anisotropy effects in diamond turning of single-crystalline germanium. A microplasticity-based numerical simulation model was proposed, in which the effects of tool geometry and machining conditions can be involved. Two coefficients were introduced to compensate the Schmid factors of two different types of symmetrical slip systems. Simulation of ductile machinability was conducted on two crystallographic planes (100) and (111), and the simulation results were consistent with the experimental results. It was indicated that the simulation model can be used to predict the brittle-ductile boundary change with machining conditions and crystal orientations of germanium.

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