Porous Low-k Dielectrics: Material Properties

2004 ◽  
pp. 161-172 ◽  
Author(s):  
C. Tyberg ◽  
E. Huang ◽  
J. Hedrick ◽  
E. Simonyi ◽  
S. Gates ◽  
...  
Keyword(s):  
Material Properties ◽  
Low K

Porous ultra low k deposited by PECVD: From deposition to material properties

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9248-9251 ◽  
Author(s):  
V. Jousseaume ◽  
L. Favennec ◽  
A. Zenasni ◽  
O. Gourhant
Keyword(s):  
Material Properties ◽  
Low K

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

2011 ◽  
Vol 519 (11) ◽  
pp. 3619-3626 ◽  
Author(s):  
Premysl Marsik ◽  
Adam M. Urbanowicz ◽  
Patrick Verdonck ◽  
David De Roest ◽  
Hessel Sprey ◽  
...  
Keyword(s):  
Material Properties ◽  
Dielectric Material ◽  
Ultraviolet Curing ◽  
Plasma Damage ◽  
Damage Resistance ◽  
Low K

Effect of plasma treatments on ultra low-k material properties

2005 ◽  
Vol 82 (3-4) ◽  
pp. 399-404 ◽  
Author(s):  
A. Humbert ◽  
L. Mage ◽  
C. Goldberg ◽  
K. Junker ◽  
L. Proenca ◽  
...  
Keyword(s):  
Material Properties ◽  
Plasma Treatments ◽  
Low K

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

2015 ◽  
Vol 1791 ◽  
pp. 15-20 ◽  
Author(s):  
Karina B. Klepper ◽  
Ville Miikkulainen ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carboxylic Acids ◽  
Material Properties ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Leakage Currents ◽  
Low Dielectric ◽  
Low K ◽  
Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Ultra Low-k Materials Based on Self-Assembled Organic Polymers

2011 ◽  
Vol 1335 ◽  
Author(s):  
M. Pantouvaki ◽  
L. Zhao ◽  
C. Huffman ◽  
K. Vanstreels ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Pore Size ◽  
Material Properties ◽  
Open Porosity ◽  
Dielectric Breakdown ◽  
Organic Polymers ◽  
Plasma Damage ◽  
Small Pore Size ◽  
Small Pore ◽  
Lower Porosity ◽  
Low K

ABSTRACTThe material properties of two ultra low-k organic polymers are characterized for copper interconnect integration. The k-values are 2.2-2.3 for both. Compared to OSG materials of similar k-values, these polymers have lower porosity and smaller pore size, achieved using selfassembled chemistry. Both materials demonstrate excellent resistance to plasma damage: no water uptake was detected after exposure to selected etching plasmas. This characteristic, combined with the small pore size and low porosity, results in the successful integration of the organic low-ks in 80 nm spacing with no significant increase in the integrated k-values.It is found that higher open porosity in polymer A is accompanied by higher leakage current, which is not however linked to lower dielectric breakdown lifetimes.

On the Mechanical Integrity of Ultra Low Dielectric Constant Materials for Use in Ulsi Beol Structures

2000 ◽  
Vol 612 ◽  
Author(s):  
E. O. Shaffer ◽  
K. E. Howard ◽  
M. E. Mills ◽  
P.H. Townsend
Keyword(s):  
Dielectric Constant ◽  
Material Properties ◽  
Process Integration ◽  
Effective Properties ◽  
Material Selection ◽  
Selection Process ◽  
Full Density ◽  
Interlayer Dielectric ◽  
Mechanical Integrity ◽  
Low K

AbstractAdherence to the prescript of Moore's law continues to drive materials development for new and lower dielectric constant materials for use as back-end-of-line (BEOL) interlayer dielectric in advanced logic IC's. As is the case for the current generation of low-K materials (<3.0), these ultra-low K materials (<2.2) will need to meet the variety of integration and reliability requirements for successful product development. Excluding the incorporation of fluorine to lower the material polarity, further reductions of dielectric constant can only be achieved by reduced density. Based upon the industry's experience with the current class of full density dielectrics, process integration may be challenging for ultra-low K materials. This anticipated difficulty derives from the profound differences in material properties, e.g. mechanical integrity, as one lowers the material density, which in turn confounds existing manufacturing processes that have evolved over 35 years based on silicon dioxide.Minimizing these material and processing differences by extending leveraged learning from previous technology nodes is essential for timely and cost-efficient development cycles. As a result, material selection of a full density low-K is somewhat influenced by the ability of that material to be extended into future generations. Understanding how the material properties will change as its density is lowered is vital to this selection process. In this paper, we present a summary of models for calculating effective properties as a function of density and apply these to current low-K materials with emphasis on mechanical integrity. We will also review experimental methods for measuring the mechanical integrity of ultra-low K materials and compare the results to the various models described herein.

A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins

2002 ◽  
Vol 716 ◽  
Author(s):  
Ben Zhong ◽  
Herman Meynen ◽  
Francesca Iocopi ◽  
Ken Weidner ◽  
Stephane Mailhouitre ◽  
...  
Keyword(s):  
Material Properties ◽  
Spin Coating ◽  
Average Pore Size ◽  
Chemical Bonds ◽  
Thermal Cure ◽  
Average Pore ◽  
Positron Annihilation Lifetime ◽  
New Material ◽  
Highly Hydrophobic ◽  
Low K

AbstractA ULK material based on a siloxane resin has been developed that can be processed using spin-coating and thermal cure to yield porous low-k films. The chemical bonds between the resin and porogen groups prevent the phase separation of the porogen from the resin during curing and lead to extremely small pores. The highly hydrophobic thin films made from this material displayed dielectric constant of 1.8, breakdown voltage of 4 MV/cm, a cohesive strength > 60 MPa, excellent crack resistance, and an average pore size of 2.2 nm by Positron Annihilation Lifetime Spectroscopy (PALS) and 2.5-3.0 nm by Ellipsometric Porosimetry (EP). In this paper, our strategy for designing low-k materials, the material properties and initial integration results for this new material will be discussed.

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