Contributions of CF and CF2 Species to Fluorocarbon Film Composition and Properties for CxFy Plasma-Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 4 (3) ◽  
pp. 1733-1741 ◽  
Author(s):  
Michael F. Cuddy ◽  
Ellen R. Fisher
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Composition ◽  
Fluorocarbon Film

Search for New High-κ Dielectrics by Combinatorial Chemical Vapor Deposition

2003 ◽  
Vol 765 ◽  
Author(s):  
Bin Xia ◽  
Ryan Smith ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Film Composition ◽  
Metal Nitrates ◽  
Ternary Metal ◽  
The Given

AbstractTo develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films

2004 ◽  
Vol 848 ◽  
Author(s):  
S. Naskar ◽  
C. A. Bower ◽  
L. N. Yadon ◽  
S.D. Wolter ◽  
B.R. Stoner ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Film Properties ◽  
Film Composition ◽  
Material Chemistry ◽  
Deposition Conditions

ABSTRACTThe importance of silicon oxynitride (SiOxNy) for optoelectronic device applications is ever increasing owing to its tunable refractive index. In this research, the influence of deposition conditions on film properties, correlated with film composition and bonding, have been investigated. Thick SiOxNy films were deposited in a plasma enehanced chemical vapor deposition reactor using silane (SiH4) and nitrous oxide (N2O) as precursor gases. To investigate the influence of deposition conditions on film properties, three different parameters were studied; gas flow ratio, RF plasma mixed frequency ratio and RF power. Several different SiOxNy films were deposited at varying conditions. The temperature and pressure were maintained at 350°C and 1 Torr during all the experimental runs. The films were characterized for refractive index, growth rate and residual stress. The refractive index and the thickness of the films were measured using a prism-coupling technique. For composition analysis, x-ray photoelectron spectroscopy studies and elastic recoil detection analysis were undertaken. The materials analysis was used to determine the correlation between growth parameters and material chemistry. In addition, the correlation between material chemistry and refractive index was also investigated.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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