Poly(p-phenylene vinylene) Prepared by Chemical Vapor Deposition:  Influence of Monomer Selection and Reaction Conditions on Film Composition and Luminescence Properties

1998 ◽  
Vol 31 (20) ◽  
pp. 6789-6793 ◽  
Author(s):  
Kathleen M. Vaeth ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Luminescence Properties ◽  
Phenylene Vinylene ◽  
Reaction Conditions ◽  
Film Composition

Preparation and Characrization of Tic/C Composite Fiber by Chemical Vapor Deposition

2012 ◽  
Vol 455-456 ◽  
pp. 935-938
Author(s):  
Hai Quan Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Composite Fiber ◽  
Composite Fibers ◽  
X Ray Diffraction ◽  
Reaction Conditions ◽  
Tic Particle ◽  
Higher Temperature

- TiC/C composite fibers were prepared by vapor phase titanizing of the regular carbon fibers via chemical vapor deposition (CVD). The carbon fibers were titanized from the surface of the fiber to the core. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were applied to characterize the morphology and structure of the TiC/C composite fibers. The influences of CVD reaction conditions such as temperature and reaction time on the TiC particle size and the thickness of the deposited layer were investigated. Higher temperature and longer time resulted in the growth of bigger size of the TiC crystal particles, and the particle uniformity was also decreased.

Morphology and Luminescence of Poly ( p -Phenylene Vinylene) Films Prepared by Chemical Vapor Deposition

2002 ◽  
Vol 377 (1) ◽  
pp. 169-172 ◽  
Author(s):  
Guolun Zhong ◽  
Kyungkon Kim ◽  
Dongjune Ahn ◽  
Taeyoung Kim ◽  
Jung-Il Jin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phenylene Vinylene

Search for New High-κ Dielectrics by Combinatorial Chemical Vapor Deposition

2003 ◽  
Vol 765 ◽  
Author(s):  
Bin Xia ◽  
Ryan Smith ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxides ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Film Composition ◽  
Metal Nitrates ◽  
Ternary Metal ◽  
The Given

AbstractTo develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

Luminescence Properties of Y2O3:Tb3+Whiskers Fabricated by Chemical Vapor Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 7111-7119 ◽  
Author(s):  
Hikmat Najafov ◽  
Yuko Satoh ◽  
Shigeo Ohshio ◽  
Ariyuki Kato ◽  
Hidetoshi Saitoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Luminescence Properties

Chemical vapor deposition of cobalt using novel cobalt(I) precursors

2002 ◽  
Vol 17 (2) ◽  
pp. 267-270 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Ho G. Jang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Method ◽  
Gas Phase Reactions ◽  
Reaction Conditions ◽  
Hydride Complexes ◽  
Cobalt Thin Films ◽  
Substrate Temperatures

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

Luminescence Properties of Y2O3:Tm3+Whiskers Produced by Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4363-4368 ◽  
Author(s):  
Hikmat Najafov ◽  
Yuko Sato ◽  
Shigeo Ohshio ◽  
Seishi Iida ◽  
Hidetoshi Saitoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Luminescence Properties
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