Effect of growth parameters on refractive index and film composition of plasma enhanced chemical vapor deposition silicon oxynitride films

2004 ◽  
Vol 848 ◽  
Author(s):  
S. Naskar ◽  
C. A. Bower ◽  
L. N. Yadon ◽  
S.D. Wolter ◽  
B.R. Stoner ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Film Properties ◽  
Film Composition ◽  
Material Chemistry ◽  
Deposition Conditions

ABSTRACTThe importance of silicon oxynitride (SiOxNy) for optoelectronic device applications is ever increasing owing to its tunable refractive index. In this research, the influence of deposition conditions on film properties, correlated with film composition and bonding, have been investigated. Thick SiOxNy films were deposited in a plasma enehanced chemical vapor deposition reactor using silane (SiH4) and nitrous oxide (N2O) as precursor gases. To investigate the influence of deposition conditions on film properties, three different parameters were studied; gas flow ratio, RF plasma mixed frequency ratio and RF power. Several different SiOxNy films were deposited at varying conditions. The temperature and pressure were maintained at 350°C and 1 Torr during all the experimental runs. The films were characterized for refractive index, growth rate and residual stress. The refractive index and the thickness of the films were measured using a prism-coupling technique. For composition analysis, x-ray photoelectron spectroscopy studies and elastic recoil detection analysis were undertaken. The materials analysis was used to determine the correlation between growth parameters and material chemistry. In addition, the correlation between material chemistry and refractive index was also investigated.

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

Highly Tm Doped Silica Optical Preform by MCVD - Chelate Vapor Delivery (Soot-Dopant Stepwise Technique)

2018 ◽  
Vol 780 ◽  
pp. 57-61 ◽  
Author(s):  
K.A. Mat-Sharif ◽  
Nasr Y.M. Omar ◽  
M.I. Zulkifli ◽  
S.Z. Muhd-Yassin ◽  
Y.K. Sin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Absorption Spectrum ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Peak ◽  
Strong Absorption ◽  
Silica Fiber ◽  
Index Variation ◽  
Strong Absorption Peak

This paper presents the progress in the fabrication of highly doped thulium silica fiber. As much as 5.3 wt. % Tm alongside 7.1 wt. % Al (co-dopant) were incorporated into silica preform. The preform was fabricated using the Modified Chemical Vapor Deposition (MCVD)-chelate vapor delivery with soot-dopant stepwise technique. The preform was analyzed for several key properties such as refractive index variation along deposition length, dopants distribution profiles and UV-Vis absorption. The results showed a homogeneous dopants distribution with 4% RSD in the longitudinal refractive index along a 40 cm preform length. The UV-Vis absorption spectrum exhibited a strong absorption peak at 790 nm attributed to Tm 3H4 energy manifold.

scholarly journals Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1887
Author(s):  
Ming Pan ◽  
Chen Wang ◽  
Hua-Fei Li ◽  
Ning Xie ◽  
Ping Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Morphology Evolution ◽  
Force Microscopy ◽  
Smooth Edge ◽  
Transmission Electron

U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.

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