scholarly journals Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6843-6850 ◽  
Author(s):  
Xiang-Yang Liu ◽  
Ilke Arslan ◽  
Bruce W. Arey ◽  
Justin Hackley ◽  
Vincenzo Lordi ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Arrays

Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

2001 ◽  
Vol 673 ◽  
Author(s):  
A. Maxwell Andrews ◽  
J.S. Speck ◽  
A.E. Romanov ◽  
M. Bobeth ◽  
W. Pompe
Keyword(s):  
Misfit Dislocation ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Subsequent Step ◽  
Step Flow Growth ◽  
Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

Strain Relaxation by Dislocation Arrays in Thin Films

2003 ◽  
Vol 779 ◽  
Author(s):  
Prita Pant ◽  
Shefford P. Baker
Keyword(s):  
Thin Films ◽  
Critical Strain ◽  
Strain Relaxation ◽  
Minimum Energy ◽  
Strain Tensor ◽  
Total Strain Energy ◽  
Dislocation Arrays ◽  
Strain Data ◽  
Shear Strains ◽  
Fcc Metal

AbstractAn analytical model for strain relaxation by misfit dislocation arrays in thin films is presented that takes into account all components of the strain tensor, including shear strains. The model is developed for (001) films and applied to strain relaxation in (011) oriented FCC metal films. Our results show that shear strains strongly influence the total strain energy of the film. Since both the critical strain for dislocation formation, and the equilibrium spacing of dislocations in arrays depend on the minimum energy values, these quantities are found to be different from those predicted by previous models. This model is useful for understanding both critical strain data and strain relaxation in films.

Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing

1993 ◽  
Vol 63 (16) ◽  
pp. 2234-2236 ◽  
Author(s):  
Y. Chen ◽  
Z. Liliental‐Weber ◽  
J. Washburn ◽  
J. F. Klem ◽  
J. Y. Tsao
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Arrays

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers.

1991 ◽  
Vol 239 ◽  
Author(s):  
R. Hull ◽  
J. C. Bean ◽  
F. Ross ◽  
D. Bahnck ◽  
L. J. Pencolas
Keyword(s):  
Misfit Dislocation ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Misfit Dislocations ◽  
Slip Systems ◽  
Strained Layers ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Strain Stress ◽  
Kinetics Of

ABSTRACTThe geometries, microstructures, energetics and kinetics of misfit dislocations as functions of surface orientation and the magnitude of strain/stress are investigated experimentally and theoretically. Examples are drawn from (100), (110) and (111) surfaces and from the GexSi1–x/Si and InxGa1–x/GaAs systems. It is shown that the misfit dislocation geometries and microstructures at lattice mismatch stresses < - 1GPa may in general be predicted by operation of the minimum magnitude Burgers vector slipping on the widest spaced planes. At stresses of the order several GPa, however, new dislocation systems may become operative with either modified Burgers vectors or slip systems. Dissociation of totál misfit dislocations into partial dislocations is found to play a crucial role in strain relaxation, on surfaces other than (100) under compressive stress.

Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP

2012 ◽  
Vol 112 (2) ◽  
pp. 023520 ◽  
Author(s):  
R. M. France ◽  
W. E. McMahon ◽  
A. G. Norman ◽  
J. F. Geisz ◽  
M. J. Romero
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Glide ◽  
Plane Distribution

Strain relaxation in ultrathin films: A modified theory of misfit-dislocation energetics

1993 ◽  
Vol 47 (20) ◽  
pp. 13730-13736 ◽  
Author(s):  
A. P. Payne ◽  
B. M. Lairson ◽  
B. M. Clemens
Keyword(s):  
Misfit Dislocation ◽  
Ultrathin Films ◽  
Strain Relaxation ◽  
Modified Theory

Dependence of Threading Dislocation Density on Substrate Misorientation in In0.15Ga0.85As Grown on GaAs(100)

1989 ◽  
Vol 145 ◽  
Author(s):  
P.N. Uppal ◽  
J.S. Ahearn ◽  
R. Herring
Keyword(s):  
Dislocation Density ◽  
Strain Relaxation ◽  
Dislocation Network ◽  
Uniform Density ◽  
Threading Dislocation ◽  
Dislocation Mobility ◽  
Transmission Electron ◽  
Dislocation Arrays ◽  
Threading Dislocation Density ◽  
Strained Layer Superlattices

AbstractThe density and arrangement of dislocations in In0.15Ga0.85As grown on GaAs(100)) were determined by transmission electron microscopy as a function of misorientation toward (111)A, (111)B, and (110). Strained layer superlattices were used in all cases to reduce dislocation density. Layers grown on exact GaAs(100) exhibited a non-uniform threading dislocation dis- tribution whereby some areas had a high density (∼ 109cm-2or higher) of dislocation tangles and other areas that we in between had a more uniform density (∼ 2 x 107cm-2). The misorientated layers exhibited a uniform threading dislocation distribution with densities of ∼ 5 x 106 cm-2 for (100) misoriented towards (111)A, ∼ 1 x 107cm-2towards (111)B, and ∼ 3 x 107cm-2 towards (110). The misfit dislocation network (dislocations located at the GaAs-InO0.15Ga0.85 As interface) formed orthogonal dislocation arrays in the case of exact (100) substrates and slightly non-ortho- gonal arrays in the case of misoriented substrates. These results are explained with the help of a general glide model of strain relaxation in which the exact (100) orientation has eight equally stressed glide systems which presumably activate during strain relaxation. With misoriented substrates the stress symmetry is broken and fewer glide systems experience the maximum stress, thus reducing the number of active dislocation systems. A small asymmetry in interfacial dis- location density was observed in all the cases where the linear dislocation density along the two (011) and (011) orthogonal directions differed by about 20%. This is explained by the preferred activation of (x-dislocations (high dislocation mobility) over 13-dislocations (low dislocation mobility).

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