Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing

1993 ◽  
Vol 63 (16) ◽  
pp. 2234-2236 ◽  
Author(s):  
Y. Chen ◽  
Z. Liliental‐Weber ◽  
J. Washburn ◽  
J. F. Klem ◽  
J. Y. Tsao
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Arrays

A Multiplication Mechanism for Misfit Dislocations

1992 ◽  
Vol 263 ◽  
Author(s):  
Michael A. Capano
Keyword(s):  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Sequential Process ◽  
Single Dislocation ◽  
Dislocation Arrays ◽  
Half Loop ◽  
Dislocation Sources

ABSTRACTA new mechanism which describes how misfit dislocations in epitaxial layers multiply is presented. This work demonstrates how a single threading dislocation can give rise to an array of dislocation sources, where each source generates a single dislocation loop perpendicular to the primary misfit dislocation. As a threading dislocation with pure screw character glides through an epilayer, certain processes occur which lead to the production of a single dislocation half-loop, and the regeneration of the original threading dislocation. The regenerated threading dislocation continues to propagate on its primary glide plane, which allows the process to repeat itself at some later time. The result of this sequential process is an array of half-loops perpendicular to the primary misfit dislocation. The shape and symmetry of the arrays also contains information regarding how the mechanism operates. The proposed mechanism is related to misfit dislocation arrays in a single Si0.87Ge0.13 layer on Si(001).

scholarly journals Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas

2006 ◽  
Vol 911 ◽  
Author(s):  
Philip G. Neudeck ◽  
Andrew J. Trunek ◽  
David J. Spry ◽  
J. Anthony Powell ◽  
Hui Du ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Heteroepitaxial Growth ◽  
Surface Polarity ◽  
Face Surface ◽  
Structure Quality ◽  
Mesa Structure ◽  
Mismatch Strain ◽  
Growth Characterization ◽  
Dislocation Arrays ◽  
Made In

AbstractThis paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Structure and Electronic Properties of Misfit Dislocations in ZnSe/GaAs(001) Heterojunctions

1994 ◽  
Vol 340 ◽  
Author(s):  
Y. Chen ◽  
X. Liu ◽  
E. Weber ◽  
E. D. Bourret ◽  
D. J. Olego ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Electronic Properties ◽  
Misfit Dislocation ◽  
Orthogonal Array ◽  
High Density ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Dislocation Arrays

ABSTRACTStudies of the structure and electrical properties of regular and irregular misfit dislocations in undoped and N-doped ZnSe epilayers grown on GaAs(001) substrates by transmission electron microscopy (TEM), cathodoluminescence (CL) are reported. In undoped ZnSe epilayers, two sets of misfit dislocation arrays were observed: a straight orthogonal array along [110] and, and an irregular array roughly along [100] and [010] directions. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along <110>, possibly due to the high density of kinks existing along the zig-zag irregular dislocations. These irregular dislocations can be eliminated by doping nitrogen in the ZnSe epilayer with [N]≥l×1018 cm−3.

scholarly journals Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6843-6850 ◽  
Author(s):  
Xiang-Yang Liu ◽  
Ilke Arslan ◽  
Bruce W. Arey ◽  
Justin Hackley ◽  
Vincenzo Lordi ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Arrays

scholarly journals Misfit Dislocations in Epitaxial Ni/Cu Bilayer and Cu/Ni/Cu Trilayer Thin Films

2001 ◽  
Vol 673 ◽  
Author(s):  
Tadashi Yamamoto ◽  
Amit Misra ◽  
Richard G. Hoagland ◽  
Mike Nastasi ◽  
Harriet Kung ◽  
...  
Keyword(s):  
Thin Films ◽  
Layer Thickness ◽  
Misfit Dislocation ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Plan View ◽  
Transmission Electron ◽  
Dislocation Arrays ◽  
20 Nm

ABSTRACTMisfit dislocations at the interfaces of bilayer (Ni/Cu) and trilayer (Cu/Ni/Cu) thin films were examined by plan-view transmission electron microscopy (TEM). In the bilayers, the spacing of misfit dislocations was measured as a function of Ni layer thickness. The critical thickness, at which misfit dislocations start to appear with the loss of coherency, was found to be between 2 and 5 nm. The spacing of the misfit dislocations decreased with increasing Ni layer thickness and reached a plateau at the thickness of 30 nm. The minimum spacing is observed to be about 20 nm. A g·b analysis of the cross-grid of misfit dislocations revealed 90° Lomer dislocations of the <110>{001} type lying in the (001) interface plane at a relatively large thickness of the Ni layer, but 60° glide dislocations of the <110>{111} type at a relatively small thickness of the Ni layer. In the trilayers, misfit dislocations formed at both interfaces. The spacing of the misfit dislocation is in agreement with that of the bilayers with a similar Ni layer thickness. The misfit dislocation arrays at the two interfaces, having the same line directions, are 60° dislocations with edge components with opposite signs but are displaced with respect to each other in the two different interface planes. This suggests that interactions of the strain fields of the dislocations have a strong influence on their positions at the interface.

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