Self-Powered Au/MgZnO/Nanolayered Ga-Doped ZnO/In Metal–Insulator–Semiconductor UV Detector with High Internal Gain at Deep UV Light under Low Voltage

2019 ◽  
Vol 3 (1) ◽  
pp. 120-130 ◽  
Author(s):  
Shun Han ◽  
Haojie Zhang ◽  
Youming Lu ◽  
Wangying Xu ◽  
Ming Fang ◽  
...  
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Uv Detector ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Internal Gain ◽  
Doped Zno ◽  
Deep Uv ◽  
Self Powered

scholarly journals Internal Gain of InGaN/GaN Metal-Insulator-Semiconductor Photodetector

2013 ◽  
Vol 25 (4) ◽  
pp. 2080-2082
Author(s):  
Hao Luo ◽  
Kai-Xiao Zhang ◽  
Ai-Bin Ma ◽  
Jing-Hua Jiang ◽  
Hai-Yan Xie ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Internal Gain

scholarly journals Self-powered, high response and fast response speed metal–insulator–semiconductor structured photodetector based on 2D MoS2

RSC Advances ◽  
2018 ◽  
Vol 8 (49) ◽  
pp. 28041-28047 ◽  
Author(s):  
Xinxin Liu ◽  
Feng Li ◽  
Minxuan Xu ◽  
Junjie Qi
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
High Response ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Response Recovery ◽  
Self Powered

A MIS structured self-powered photodetector of Pd/HfO2/MoS2 was fabricated by inserting a thin insulator, which has a fast response/recovery speed.

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

Nano-Ripple ZnO-Based Triboelectric Nanogenerator for Applications in Self-Powered Ultraviolet Detector

2019 ◽  
Vol 19 (11) ◽  
pp. 7369-7373 ◽  
Author(s):  
Jintang Lin
Keyword(s):  
Uv Irradiation ◽  
Uv Light ◽  
Power Source ◽  
Triboelectric Nanogenerator ◽  
Wearable Electronics ◽  
Uv Detector ◽  
External Power Source ◽  
Wide Range ◽  
External Power ◽  
Self Powered

Ultraviolet (UV) detectors have a wide range of commercial applications. However, most UV light detectors require an external power source, which limits their applications as portable and/or wearable electronics. In this work, a self-powered UV detector based on triboelectric nanogenerator (TENG) technology is demonstrated. Nano-ripple zinc oxide (ZnO) film acting as both UV-sensitive and triboelectric material was synthesized by a simple sol–gel method. The self-powered UV sensor detected UV irradiation without an external power source. The open-circuit voltage of the device under UV irradiation was 130 V, which was 2.3 times higher than the output of the device in the dark. Possible operating mechanisms of the device, which is based on the contact electrification process, are described.

Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

2019 ◽  
Vol 60 ◽  
pp. 86-93
Author(s):  
Kasif Teker
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Fast Response ◽  
Light Sensitivity ◽  
Image Sensors ◽  
Uv Photodetector ◽  
Low Voltage Operation ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
New Applications

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

Green Electroluminescence in Low-Voltage-Driven Metal-Insulator-Semiconductor Structure Devices

1983 ◽  
Vol 22 (Part 1, No. 7) ◽  
pp. 1133-1136 ◽  
Author(s):  
Junichi Ohwaki ◽  
Haruki Kozawaguchi ◽  
Bunjiro Tsujiyama
Keyword(s):  
Low Voltage ◽  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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