High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity

2019 ◽  
Vol 7 (13) ◽  
pp. 3817-3821 ◽  
Author(s):  
Cheng Jia ◽  
Di Wu ◽  
Enping Wu ◽  
Jiawen Guo ◽  
Zhihui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Fast Response ◽  
Polarization Sensitivity ◽  
High Responsivity ◽  
High Polarization ◽  
Specific Detectivity ◽  
Self Powered

A high-performance self-powered photodetector based on a MoS2/GaAs heterojunction was demonstrated, which demonstrated a high responsivity, specific detectivity, fast response speeds, as well as high polarization sensitivity.

scholarly journals A Self-Powered Nanogenerator for the Electrical Protection of Integrated Circuits from Trace Amounts of Liquid

2019 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhuang Hui ◽  
Ming Xiao ◽  
Daozhi Shen ◽  
Jiayun Feng ◽  
Peng Peng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Printed Circuit Board ◽  
Short Circuit ◽  
High Sensitivity ◽  
Short Circuit Current ◽  
Fast Response ◽  
Open Circuit ◽  
Circuit Board ◽  
Self Powered

Abstract With the increase in the use of electronic devices in many different environments, a need has arisen for an easily implemented method for the rapid, sensitive detection of liquids in the vicinity of electronic components. In this work, a high-performance power generator that combines carbon nanoparticles and TiO2 nanowires has been fabricated by sequential electrophoretic deposition (EPD). The open-circuit voltage and short-circuit current of a single generator are found to exceed 0.7 V and 100 μA when 6 μL of water was applied. The generator is also found to have a stable and reproducible response to other liquids. An output voltage of 0.3 V was obtained after 244, 876, 931, and 184 μs, on exposure of the generator to 6 μL of water, ethanol, acetone, and methanol, respectively. The fast response time and high sensitivity to liquids show that the device has great potential for the detection of small quantities of liquid. In addition, the simple easily implemented sequential EPD method ensures the high mechanical strength of the device. This compact, reliable device provides a new method for the sensitive, rapid detection of extraneous liquids before they can impact the performance of electronic circuits, particularly those on printed circuit board.

A High Performance UV Photodetector from Thin Film Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
Robert D. Mckeag ◽  
Michael D. Whitfield ◽  
Simon Sm Chan ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Dark Current ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Deep Uv

ABSTRACTThin film diamond has been used to fabricate a photodetector which displays high sensitivity to deep UV light, with an external quantum efficiency of greater than one, a dark current of less than 0.1nA and which is near ‘blind’ to visible light.

High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Inorganic P ◽  
Solar Blind ◽  
Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector

2019 ◽  
Vol 60 ◽  
pp. 86-93
Author(s):  
Kasif Teker
Keyword(s):  
Low Voltage ◽  
Uv Light ◽  
Fast Response ◽  
Light Sensitivity ◽  
Image Sensors ◽  
Uv Photodetector ◽  
Low Voltage Operation ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
New Applications

High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Near Infrared ◽  
Response Speed ◽  
Fast Response ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
High Responsivity ◽  
Specific Detectivity

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

High performance, self-powered ultraviolet photodetector based on a ZnO nanoarrays/GaN structure with a CdS insert layer

2017 ◽  
Vol 41 (12) ◽  
pp. 4901-4907 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Lu Yang ◽  
Cong Ye ◽  
Mengni Xue ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Self Powered

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.

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