Evolution from random lasing to erbium-related electroluminescence from metal-insulator-semiconductor structured light-emitting device with erbium-doped ZnO film on silicon

2020 ◽  
Vol 127 (5) ◽  
pp. 055705
Author(s):  
Jinxin Chen ◽  
Ziwei Wang ◽  
Jiahao Cao ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Structured Light ◽  
Random Lasing ◽  
Zno Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Erbium Doped ◽  
Doped Zno

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes

2020 ◽  
pp. 2000524
Author(s):  
Chen-Sheng Lin ◽  
Duncan W. E. Allsopp ◽  
Kate Cavanagh ◽  
Hei Chit Leo Tsui ◽  
Ling-Shan Yu ◽  
...  
Keyword(s):  
Tunnel Diodes ◽  
Simple Metal ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultraviolet Emissions

scholarly journals Highly Efficient Room Temperature Spin Injection in a Metal-Insulator-Semiconductor Light-Emitting Diode

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L502-L504 ◽  
Author(s):  
Pol Van Dorpe ◽  
Vasyl F. Motsnyi ◽  
Mayke Nijboer ◽  
Etienne Goovaerts ◽  
Viacheslav I. Safarov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emitting Diode ◽  
Spin Injection ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Highly Efficient

Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors

2008 ◽  
Vol 103 (1) ◽  
pp. 016103 ◽  
Author(s):  
T.-H. Cheng ◽  
M. H. Liao ◽  
Lingyen Yeh ◽  
T.-L. Lee ◽  
M.-S. Liang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Digital Communication ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting

Coulomb Gap and Metal–Insulator–Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain

Plasmonics ◽  
2015 ◽  
Vol 10 (6) ◽  
pp. 1291-1300 ◽  
Author(s):  
R. Bhunia ◽  
N. Bhadra ◽  
S. Das ◽  
S. Hussain ◽  
B. R. Chakraborty ◽  
...  
Keyword(s):  
Zno Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Coulomb Gap

scholarly journals Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: Enhancement effect of fluorine co-doping

2019 ◽  
Vol 27 (21) ◽  
pp. 30919 ◽  
Author(s):  
Jinxin Chen ◽  
Weijun Zhu ◽  
Yuhan Gao ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped ◽  
Doped Zno

scholarly journals Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Lung-Chien Chen ◽  
Chih-Hung Hsu ◽  
Xiuyu Zhang ◽  
Jia-Ren Wu
Keyword(s):  
Indium Tin Oxide ◽  
Low Cost ◽  
Ultrasonic Spray Pyrolysis ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Ultrasonic Spray ◽  
Ito Glass ◽  
White Light Emitting Diodes

ZnO:YAG-based metal-insulator-semiconductor (MIS) diodes with various insulators were synthesized on an indium tin oxide (ITO) glass by ultrasonic spray pyrolysis. SiO2and MnZnO (MZO) were separately used as insulators. X-ray diffraction revealed the crystalline structure of the ZnO:YAG film. The photoluminescence (PL) properties of the ZnO:YAG film were studied and the color of photoluminescence was found to be almost white. The electrical properties of the diodes with different insulators and thicknesses were compared. The diode with the SiO2insulator had a lower threshold voltage, smaller leakage current, and a higher series resistance than that with the MZO insulator layer.

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