Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure

2021 ◽  
Author(s):  
Naoomi Yamada ◽  
Mari Mizutani ◽  
Kenta Matsuura ◽  
Masataka Imura ◽  
Hidenobu Murata ◽  
...  
Keyword(s):  
Band Gap ◽  
Wurtzite Structure ◽  
Earth Abundant

Thermodynamics, kinetics and electronic properties of point defects in β-FeSi2

2019 ◽  
Vol 21 (20) ◽  
pp. 10497-10504 ◽  
Author(s):  
Jun Chai ◽  
Chen Ming ◽  
Xiaolong Du ◽  
Pengfei Qiu ◽  
Yi-Yang Sun ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Point Defects ◽  
Systematic Study ◽  
Wide Temperature Range ◽  
Semiconductor Material ◽  
Temperature Range ◽  
Earth Abundant

β-FeSi2, a semiconductor material made of two of the most earth-abundant elements, has important applications in thermoelectrics, photovoltaics and optoelectronics owing to its attractive properties such as suitable band gap and air stability over a wide temperature range. In this paper, we present a systematic study on point defects in this material.

Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA

2011 ◽  
Vol 110 (6) ◽  
pp. 063724 ◽  
Author(s):  
T. Han ◽  
F. Y. Meng ◽  
S. Zhang ◽  
X. M. Cheng ◽  
J. I. Oh
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Wurtzite Structure ◽  
Co Doped

A facile and low-cost synthesis of promising absorber materials on Cu2ZnSn(Sx,Se1−x)4 nanocrystals consisting of earth abundant elements with tunable band gap characteristics

2012 ◽  
Vol 22 (40) ◽  
pp. 21727 ◽  
Author(s):  
Seung Wook Shin ◽  
Jun Hee Han ◽  
Yeon Chan Park ◽  
G. L. Agawane ◽  
Chae Hwan Jeong ◽  
...  
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Earth Abundant ◽  
Gap Characteristics ◽  
Tunable Band Gap

Thermoelectrics with earth abundant elements: low thermal conductivity and high thermopower in doped SnS

2014 ◽  
Vol 2 (41) ◽  
pp. 17302-17306 ◽  
Author(s):  
Qing Tan ◽  
Li-Dong Zhao ◽  
Jing-Feng Li ◽  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Thermoelectric Material ◽  
Environmentally Friendly ◽  
Wide Band ◽  
Wide Band Gap ◽  
Ag Doping ◽  
Earth Abundant

We present that earth-abundant and environmentally friendly SnS is a promising thermoelectric material due to its high ZT of 0.6 despite its relatively wide band gap of 1.2 eV. Ag doping significantly improved electrical conductivity but maintained the Seebeck coefficient above 400 μV K−1 and the thermal conductivity below 0.45 W m−1 K−1 at 873 K.

Thin Film WSe2 for Use as a Photovoltaic Absorber Material

2014 ◽  
Vol 1670 ◽  
Author(s):  
Qinglei Ma ◽  
Hrachya Kyureghian ◽  
Joel D. Banninga ◽  
N. J. Ianno
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Spectrum ◽  
Absorber Material ◽  
Excellent Candidate ◽  
Earth Abundant ◽  
Type Semiconductor ◽  
Sputter Deposited ◽  
P Type

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

Earth Abundant Element Cu2Zn(Sn1−xGex)S4Nanocrystals for Tunable Band Gap Solar Cells: 6.8% Efficient Device Fabrication

2011 ◽  
Vol 23 (10) ◽  
pp. 2626-2629 ◽  
Author(s):  
Grayson M. Ford ◽  
Qijie Guo ◽  
Rakesh Agrawal ◽  
Hugh W. Hillhouse
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Device Fabrication ◽  
Earth Abundant ◽  
Abundant Element ◽  
Tunable Band Gap

Preparation of quinary CuNi Zn2−InS4 nanocrystals with wurtzite structure and tunable band gap

2020 ◽  
Vol 820 ◽  
pp. 153436 ◽  
Author(s):  
Yueling Xu ◽  
Qi Fu ◽  
Shuijin Lei ◽  
Lixiang Lai ◽  
Jinsong Xiong ◽  
...  
Keyword(s):  
Band Gap ◽  
Wurtzite Structure ◽  
Tunable Band Gap

scholarly journals ZnSnS3: Structure Prediction, Ferroelectricity, and Solar Cell Applications

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Radi A. Jishi ◽  
Marcus A. Lucas
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Structure Prediction ◽  
High Performance ◽  
Wide Band ◽  
Energy Industry ◽  
Infrared Range ◽  
Metastable Structures ◽  
Earth Abundant ◽  
Solar Energy Industry

The rapid growth of the solar energy industry is driving a strong demand for high performance, efficient photoelectric materials. In particular, ferroelectrics composed of earth-abundant elements may be useful in solar cell applications due to their large internal polarization. Unfortunately, wide band gaps prevent many such materials from absorbing light in the visible to mid-infrared range. Here, we address the band gap issue by investigating the effects of substituting sulfur for oxygen in the perovskite structure ZnSnO3. Using evolutionary methods, we identify the stable and metastable structures of ZnSnS3and compare them to those previously characterized for ZnSnO3. Our results suggest that the most stable structure of ZnSnS3is the monoclinic structure, followed by the metastable ilmenite and lithium niobate structures. The latter structure is highly polarized, possessing a significantly reduced band gap of 1.28 eV. These desirable characteristics make it a prime candidate for solar cell applications.

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