Thin Film WSe2 for Use as a Photovoltaic Absorber Material

2014 ◽  
Vol 1670 ◽  
Author(s):  
Qinglei Ma ◽  
Hrachya Kyureghian ◽  
Joel D. Banninga ◽  
N. J. Ianno
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Spectrum ◽  
Absorber Material ◽  
Excellent Candidate ◽  
Earth Abundant ◽  
Type Semiconductor ◽  
Sputter Deposited ◽  
P Type

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

One-step electrodeposition of CuInxGa1−xSe2 thin films from a mixture system of ionic liquid and ethanol

2015 ◽  
Vol 39 (10) ◽  
pp. 7742-7745 ◽  
Author(s):  
Ye Lian ◽  
Shanshan Ji ◽  
Lei Zhao ◽  
Jie Zhang ◽  
Peixia Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ionic Liquid ◽  
Band Gap ◽  
High Crystalline Quality ◽  
Cigs Thin Film ◽  
Type Semiconductor ◽  
One Step ◽  
P Type ◽  
Mixture System

Synthesizing high crystalline quality p-type semiconductor CIGS thin film with a band gap of 1.41 eV by galvanostatic electrodeposition.

Low temperature synthesis of α- and β-phase Bi2O3 thin film via B doping: tailoring optical band gap and n- to p-type Bi2O3

2019 ◽  
Vol 30 (16) ◽  
pp. 15670-15682 ◽  
Author(s):  
Bidhan Chandra Dev ◽  
Majibul Haque Babu ◽  
Jiban Podder ◽  
Suresh Sagadevan ◽  
Abdullah Zubair
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Β Phase ◽  
B Doping ◽  
P Type

AgSbSe2 thin films for photovoltaic structures produced through reaction of chemically deposited selenium thin films with Ag and Sb2S3

2004 ◽  
Vol 836 ◽  
Author(s):  
K. Bindu ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Band Gap ◽  
Solid State Reaction ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Illumination Intensity ◽  
P Type ◽  
Ag Film

ABSTRACTSelenium thin films (350 nm) deposited from a 0.01 M solution of Na2SeSO3 of pH 4.5 maintained at 10 °C for 13 h, have been used as a source of selenium vapour for reaction with vacuum deposited Ag thin film on chemically deposited Sb2S3+Ag layers. When a stack of Sb2S3+Ag is heated in contact with Se film, AgSbSe2 is formed through solid state reaction of Sb2S3 and Ag2Se. The latter is formed at 80°C through the reaction of Ag-film in Se-vapour. This thin film is photoconductive and p-type. The optical band gap is nearly 1 eV and dark conductivity, 10-3 Ω-1cm-1. This thin film has been incorporated to form a photovoltaic structure, SnO2:F-(n)CdS:In-(i)Sb2S3-(p)AgSbSe2-silver print. Voc> 400 mV and Jsc>12 mA/cm2 have been observed in this under an illumination intensity of 1 kWm-2.

scholarly journals Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

2018 ◽  
Vol 9 (24) ◽  
pp. 5405-5414 ◽  
Author(s):  
Erica M. Chen ◽  
Logan Williams ◽  
Alan Olvera ◽  
Cheng Zhang ◽  
Mingfei Zhang ◽  
...  
Keyword(s):  
Absorption Coefficient ◽  
Band Gap ◽  
Copper Selenide ◽  
Visible Range ◽  
Solar Absorber ◽  
Absorber Material ◽  
Earth Abundant ◽  
Solar Material ◽  
P Type

We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (105 cm−1) in the entire visible range make it a promising Earth-abundant solar absorber material.

Optical band gap of nanocompsoite MEH-PPV:TiO2 thin film

2010 ◽  
Author(s):  
Puteri Sarah Mohamad Saad ◽  
Fazlinashatul Suhaidah Zahid ◽  
Ahmad Sazali Hamzah ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap

scholarly journals Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–x Zn x S thin films

2021 ◽  
Vol 42 (11) ◽  
pp. 112101
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Abstract Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Characteristics of optical band gap of tantalum oxide thin film deposited by ion beam sputtering

2017 ◽  
Vol 25 (1) ◽  
pp. 21-27
Author(s):  
刘华松 LIU Hua-song ◽  
杨 霄 YANG Xiao ◽  
王利栓 WANG Li-shuan ◽  
姜玉刚 JIANG Yu-gang ◽  
季一勤 JI Yi-qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Optical Band Gap ◽  
Ion Beam ◽  
Tantalum Oxide ◽  
Oxide Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

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