A facile and low-cost synthesis of promising absorber materials on Cu2ZnSn(Sx,Se1−x)4 nanocrystals consisting of earth abundant elements with tunable band gap characteristics

2012 ◽  
Vol 22 (40) ◽  
pp. 21727 ◽  
Author(s):  
Seung Wook Shin ◽  
Jun Hee Han ◽  
Yeon Chan Park ◽  
G. L. Agawane ◽  
Chae Hwan Jeong ◽  
...  
2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrew McInnes ◽  
Jagdeep S. Sagu ◽  
Diana Mehta ◽  
K. G. U. Wijayantha

2011 ◽  
Vol 403-408 ◽  
pp. 753-757
Author(s):  
Affa Rozana Abdul Rashid ◽  
P. Susthitha Menon ◽  
Sahbudin Shaari

Undoped and Mn doped ZnO films with different percentage of doping concentration (2%, 4%, 6% and 8%) were synthesized by sol gel method with an annealing temperature of 400°C. As to investigate the physical properties and microstructures, the samples are characterized using FESEM. The surface morphology images on the films showed many spherical shaped nanoparticles and separate uniformly. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap value were affected by certain amount of Mn concentration. These films achieve tunable band gap characteristics by means of changing the dopant concentration. At lower concentration, 2% and 4% of Mn, the band gap is reducing compare to undoped ZnO. At higher doping for 6% and 8% of Mn, the bang gap suddenly increased.


2011 ◽  
Vol 23 (10) ◽  
pp. 2626-2629 ◽  
Author(s):  
Grayson M. Ford ◽  
Qijie Guo ◽  
Rakesh Agrawal ◽  
Hugh W. Hillhouse

2014 ◽  
Vol 55 ◽  
pp. 106-113 ◽  
Author(s):  
G.L. Agawane ◽  
Seung Wook Shin ◽  
S.A. Vanalakar ◽  
A.V. Moholkar ◽  
K.V. Gurav ◽  
...  

RSC Advances ◽  
2013 ◽  
Vol 3 (43) ◽  
pp. 19946 ◽  
Author(s):  
Chih-Liang Wang ◽  
Chih-Chieh Wang ◽  
B. Reeja-Jayan ◽  
Arumugam Manthiram

Author(s):  
Maurizio Cossi ◽  
Alberto Fraccarollo ◽  
Leonardo Marchese
Keyword(s):  
Band Gap ◽  

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