Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors

2020 ◽  
Vol 2 (10) ◽  
pp. 3358-3365
Author(s):  
Maria Isabel Pintor-Monroy ◽  
Bayron L. Murillo-Borjas ◽  
Manuel A. Quevedo-Lopez
Keyword(s):  
Thin Films ◽  
Ultraviolet Detectors ◽  
Deep Ultraviolet

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Irradiation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ultraviolet Light Irradiation ◽  
Deep Ultraviolet

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Deep-ultraviolet Raman scattering studies of monolayer graphene thin films

Carbon ◽  
2015 ◽  
Vol 81 ◽  
pp. 807-813 ◽  
Author(s):  
Hsiang-Lin Liu ◽  
Syahril Siregar ◽  
Eddwi H. Hasdeo ◽  
Yasuaki Kumamoto ◽  
Chih-Chiang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Monolayer Graphene ◽  
Deep Ultraviolet

Fabrication of cerium-doped β-Ga_2O_3 epitaxial thin films and deep ultraviolet photodetectors

2018 ◽  
Vol 57 (3) ◽  
pp. 538 ◽  
Author(s):  
Wenhao Li ◽  
Xiaolong Zhao ◽  
Yusong Zhi ◽  
Xuhui Zhang ◽  
Zhengwei Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

scholarly journals Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Si-Han Tsai ◽  
Sarbani Basu ◽  
Chiung-Yi Huang ◽  
Liang-Ching Hsu ◽  
Yan-Gu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17213-17221 ◽  
Author(s):  
Wen-Qing Liang ◽  
Ying Li ◽  
Jing-Li Ma ◽  
Yue Wang ◽  
Jing-Jing Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Copper Halide ◽  
Solution Processed ◽  
Light Absorber ◽  
Deep Ultraviolet

An air-stable and deep-ultraviolet-sensitive photodetector was fabricated using a solution-processed ternary copper halide Cs3Cu2I5 thin film as the light absorber.

scholarly journals Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

2008 ◽  
Vol 114 (5) ◽  
pp. 1123-1129 ◽  
Author(s):  
A. Ievtushenko ◽  
G. Lashkarev ◽  
V. Lazorenko ◽  
V. Karpyna ◽  
V. Sichkovskyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Contact Structures ◽  
Ultraviolet Detectors

scholarly journals Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1046
Author(s):  
Bhera Ram Tak ◽  
Ming-Min Yang ◽  
Marin Alexe ◽  
Rajendra Singh
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Level ◽  
Electronic Devices ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Wide Bandgap ◽  
Trap Level ◽  
Characteristic Peak ◽  
Deep Ultraviolet

Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.

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