Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

2020 ◽  
Vol 218 (1) ◽  
pp. 2000339
Author(s):  
Huili Liang ◽  
Zuyin Han ◽  
Zengxia Mei
2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala

Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...


2018 ◽  
Vol 57 (3) ◽  
pp. 538 ◽  
Author(s):  
Wenhao Li ◽  
Xiaolong Zhao ◽  
Yusong Zhi ◽  
Xuhui Zhang ◽  
Zhengwei Chen ◽  
...  

2019 ◽  
Vol 216 (20) ◽  
pp. 1900098 ◽  
Author(s):  
Nicholas Blumenschein ◽  
Tania Paskova ◽  
John F. Muth

2019 ◽  
Vol 96 ◽  
pp. 109223 ◽  
Author(s):  
Sandeep Manandhar ◽  
Anil K. Battu ◽  
Cristian Orozco ◽  
C.V. Ramana

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