A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17213-17221 ◽  
Author(s):  
Wen-Qing Liang ◽  
Ying Li ◽  
Jing-Li Ma ◽  
Yue Wang ◽  
Jing-Jing Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Copper Halide ◽  
Solution Processed ◽  
Light Absorber ◽  
Deep Ultraviolet

An air-stable and deep-ultraviolet-sensitive photodetector was fabricated using a solution-processed ternary copper halide Cs3Cu2I5 thin film as the light absorber.

scholarly journals Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1348
Author(s):  
Hiroki Nagai ◽  
Naoki Ogawa ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Uv Irradiation ◽  
Composite Thin Film ◽  
Precursor Film ◽  
Mixed Solution ◽  
Pencil Hardness ◽  
Strong Base ◽  
Deep Ultraviolet

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Identification of marcasite in pyrite FeS2 thin films and the films' carrier transport characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81394-81399 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
Hankyoul Moon ◽  
Seokhyun Yoon ◽  
Il Wan Seo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Transport ◽  
Sulfurization Temperature ◽  
Light Absorber

400 °C is optimal sulfurization temperature for pure pyrite FeS2 thin film, expecting better performance as light-absorber.

Impact of cation substitution in all solution-processed Cu2(Cd,Zn)SnS4 superstrate solar cells

2021 ◽  
Author(s):  
David Payno Zarceño ◽  
Samrana Kazim ◽  
Shahzada Ahmad
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Mass Production ◽  
Cost Effective ◽  
Thin Film Solar Cells ◽  
Energy Costs ◽  
Cation Substitution ◽  
Solution Processed ◽  
Energy Demands ◽  
Light Absorber

Thin-film solar cells constituted of abundant elements are the key to ensure mass production, reduce energy costs and meet energy demands. Kesterite, is a cost-effective light absorber, however showed low...

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

2010 ◽  
Vol 55 (3) ◽  
pp. 322-327 ◽  
Author(s):  
Y. Wang ◽  
S. W. Liu ◽  
X. W. Sun ◽  
J. L. Zhao ◽  
G. K. L. Goh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Oxide Thin Films ◽  
Solution Processed
Sign in / Sign up

Export Citation Format

Share Document