scholarly journals Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 123 (44) ◽  
pp. 27196-27206 ◽  
Author(s):  
Sabrina Wack ◽  
Petru Lunca Popa ◽  
Noureddine Adjeroud ◽  
Jérôme Guillot ◽  
Bianca Rita Pistillo ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Large Scale ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Scale Deposition

Nucleation and Growth of Silver Nanoparticles by AB and ABC-Type Atomic Layer Deposition

2014 ◽  
Vol 118 (31) ◽  
pp. 17655-17661 ◽  
Author(s):  
Sicelo S. Masango ◽  
Lingxuan Peng ◽  
Laurence D. Marks ◽  
Richard P. Van Duyne ◽  
Peter C. Stair
Keyword(s):  
Silver Nanoparticles ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Pt on the Surface Deactivated by Fluorocarbon Implantation: Investigation of the Growth Mechanism

2020 ◽  
Vol 32 (22) ◽  
pp. 9696-9703
Author(s):  
Woo-Hee Kim ◽  
Kihyun Shin ◽  
Bonggeun Shong ◽  
Ludovic Godet ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

scholarly journals The Influence of Ozone: Superstoichiometric Oxygen in Atomic Layer Deposition of Fe2O3 Using tert-Butylferrocene and O3

2019 ◽  
Author(s):  
Joel Schneider ◽  
Jon Baker ◽  
Stacey Bent
Keyword(s):  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Material Characterization ◽  
Atomic Layer ◽  
Ozone Exposure ◽  
Mechanistic Study ◽  
Domain Orientation ◽  
Layer Deposition

This work demonstrates a mechanistic study of iron oxide deposited by ALD, revealing a growth mechanism involving uptake of superstoichiometric oxygen. Material characterization shows ozone exposure can be used to convert the crystallographic phase and domain orientation of the materials. This mechanism has implications for wider classes of ozone-based ALD processes and can generalize to other systems.<br>

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