scholarly journals Revisiting the growth mechanism of atomic layer deposition of Al2O3: A vibrational sum-frequency generation study

2017 ◽  
Vol 35 (5) ◽  
pp. 05C313 ◽  
Author(s):  
Vincent Vandalon ◽  
W. M. M. (Erwin) Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Sum Frequency Generation ◽  
Sum Frequency ◽  
Layer Deposition ◽  
Frequency Generation

scholarly journals Atomic Layer Deposition of Pt on the Surface Deactivated by Fluorocarbon Implantation: Investigation of the Growth Mechanism

2020 ◽  
Vol 32 (22) ◽  
pp. 9696-9703
Author(s):  
Woo-Hee Kim ◽  
Kihyun Shin ◽  
Bonggeun Shong ◽  
Ludovic Godet ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

scholarly journals The Influence of Ozone: Superstoichiometric Oxygen in Atomic Layer Deposition of Fe2O3 Using tert-Butylferrocene and O3

2019 ◽  
Author(s):  
Joel Schneider ◽  
Jon Baker ◽  
Stacey Bent
Keyword(s):  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Material Characterization ◽  
Atomic Layer ◽  
Ozone Exposure ◽  
Mechanistic Study ◽  
Domain Orientation ◽  
Layer Deposition

This work demonstrates a mechanistic study of iron oxide deposited by ALD, revealing a growth mechanism involving uptake of superstoichiometric oxygen. Material characterization shows ozone exposure can be used to convert the crystallographic phase and domain orientation of the materials. This mechanism has implications for wider classes of ozone-based ALD processes and can generalize to other systems.<br>

scholarly journals The Influence of Ozone: Superstoichiometric Oxygen in Atomic Layer Deposition of Fe2O3 Using tert-Butylferrocene and O3

2019 ◽  
Author(s):  
Joel Schneider ◽  
Jon Baker ◽  
Stacey Bent
Keyword(s):  
Iron Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Material Characterization ◽  
Atomic Layer ◽  
Ozone Exposure ◽  
Mechanistic Study ◽  
Domain Orientation ◽  
Layer Deposition

This work demonstrates a mechanistic study of iron oxide deposited by ALD, revealing a growth mechanism involving uptake of superstoichiometric oxygen. Material characterization shows ozone exposure can be used to convert the crystallographic phase and domain orientation of the materials. This mechanism has implications for wider classes of ozone-based ALD processes and can generalize to other systems.<br>

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

2012 ◽  
Vol 329 ◽  
pp. 159-164 ◽  
Author(s):  
Rosniza Hussin ◽  
Xiang Hui Hou ◽  
Kwang Leong Choy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Semiconductor Industry ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

Unravelling the selective growth mechanism of AlOx with dimethylaluminum isopropoxide as a precursor in atomic layer deposition: a combined theoretical and experimental study

2020 ◽  
Vol 8 (8) ◽  
pp. 4308-4317 ◽  
Author(s):  
Jiaqiang Yang ◽  
Kun Cao ◽  
Quan Hu ◽  
Yanwei Wen ◽  
Xiao Liu ◽  
...  
Keyword(s):  
Experimental Study ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Selective Growth ◽  
Layer Deposition ◽  
Nano Catalysts

The selective encapsulation of Pt nano catalysts is achieved to maintain the durability and reactivity.

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