scholarly journals Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Hamin Park ◽  
Tae Keun Kim ◽  
Sung Woo Cho ◽  
Hong Seok Jang ◽  
Sang Ick Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Large Scale Synthesis ◽  
Boron Nitride Films

scholarly journals Boron Nitride as a Novel Support for Highly Stable Palladium Nanocatalysts by Atomic Layer Deposition

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 849 ◽  
Author(s):  
Matthieu Weber ◽  
Cassandre Lamboux ◽  
Bruno Navarra ◽  
Philippe Miele ◽  
Sandrine Zanna ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Average Diameter ◽  
Transmission Electron Microscopy Analysis ◽  
Layer Deposition ◽  
Palladium Nanocatalysts

The ability to prepare controllable nanocatalysts is of great interest for many chemical industries. Atomic layer deposition (ALD) is a vapor phase technique enabling the synthesis of conformal thin films and nanoparticles (NPs) on high surface area supports and has become an attractive new route to tailor supported metallic NPs. Virtually all the studies reported, focused on Pd NPs deposited on carbon and oxide surfaces. It is, however, important to focus on emerging catalyst supports such as boron nitride materials, which apart from possessing high thermal and chemical stability, also hold great promises for nanocatalysis applications. Herein, the synthesis of Pd NPs on boron nitride (BN) film substrates is demonstrated entirely by ALD for the first time. X-ray photoelectron spectroscopy indicated that stoichiometric BN formed as the main phase, with a small amount of BNxOy, and that the Pd particles synthesized were metallic. Using extensive transmission electron microscopy analysis, we study the evolution of the highly dispersed NPs as a function of the number of ALD cycles, and the thermal stability of the ALD-prepared Pd/BN catalysts up to 750 °C. The growth and coalescence mechanisms observed are discussed and compared with Pd NPs grown on other surfaces. The results show that the nanostructures of the BN/Pd NPs were relatively stable up to 500 °C. Consequent merging has been observed when annealing the samples at 750 °C, as the NPs’ average diameter increased from 8.3 ± 1.2 nm to 31 ± 4 nm. The results presented open up exciting new opportunities in the field of catalysis.

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 493-503 ◽  
Author(s):  
Robert M. Wallace ◽  
Paul C. McIntyre ◽  
Jiyoung Kim ◽  
Yoshio Nishi
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Large Scale ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Status ◽  
Scale Production ◽  
Transistor Channel ◽  
Layer Deposition ◽  
Field Effect Devices

AbstractThe prospect of utilizing alternative transistor channel materials for ultrahigh performance transistors will require suitable gate dielectrics for surface-channel field-effect devices. With the utilization of deposited gate dielectrics in large-scale production for Si-based integrated circuits by atomic layer deposition, extending this technology to channel materials that exhibit high bulk mobility behavior is of interest. A review of the current status for atomic layer deposited high-κ dielectrics on Ge and III–V channel materials is presented.

scholarly journals Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 714-718 ◽  
Author(s):  
Kang Hyuck Lee ◽  
Hyeon-Jin Shin ◽  
Jinyeong Lee ◽  
In-yeal Lee ◽  
Gil-Ho Kim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
Large Area ◽  
High Quality ◽  
Boron Nitride Nanosheets ◽  
Large Scale Synthesis

Laser-Assisted Atomic Layer Deposition of Boron Nitride Thin Films

2005 ◽  
Vol 11 (6-7) ◽  
pp. 330-337 ◽  
Author(s):  
J. Olander ◽  
L. M. Ottosson ◽  
P. Heszler ◽  
J.-O. Carlsson ◽  
K. M. E. Larsson
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

2020 ◽  
Vol 12 (32) ◽  
pp. 36688-36694
Author(s):  
Jaebeom Lee ◽  
Arul V. Ravichandran ◽  
Jaidah Mohan ◽  
Lanxia Cheng ◽  
Antonio T. Lucero ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Large Area ◽  
Layer Deposition

scholarly journals Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy

RSC Advances ◽  
2019 ◽  
Vol 9 (18) ◽  
pp. 10155-10158 ◽  
Author(s):  
Zhiyuan Shi ◽  
Guangyuan Lu ◽  
Peng Yang ◽  
Tianru Wu ◽  
Weijun Yin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Large Scale ◽  
Hexagonal Boron Nitride ◽  
Controlled Synthesis ◽  
High Quality ◽  
Cvd Growth ◽  
Boron Nitride Films

CVD growth of large scale and high quality multilayer h-BN.

Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

2014 ◽  
Vol 571 ◽  
pp. 51-55 ◽  
Author(s):  
Michael Snure ◽  
Qing Paduano ◽  
Merle Hamilton ◽  
Jodie Shoaf ◽  
J. Matthew Mann
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition
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