Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

scholarly journals Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties

2010 ◽  
Vol 157 (2) ◽  
pp. H214 ◽  
Author(s):  
S. J. Lim ◽  
Jae-Min Kim ◽  
Doyoung Kim ◽  
Soonju Kwon ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
N Concentration ◽  
Layer Deposition ◽  
Device Properties

Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92534-92540 ◽  
Author(s):  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Voltage Control ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Doped Zno ◽  
Active Channel

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

scholarly journals A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 969
Author(s):  
Haiyang Xu ◽  
Xingwei Ding ◽  
Jie Qi ◽  
Xuyong Yang ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Active Layer ◽  
Dielectric Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Layer Deposition

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

Surface Engineering Through Atomic Layer Deposition on Three-Dimensionally Structured Materials

2020 ◽  
Author(s):  
Nhi V. Quach ◽  
Quang N. Pham ◽  
Ju-Hwan Han ◽  
Youngjoon Suh ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Porous Media ◽  
Atomic Layer Deposition ◽  
Flat Surface ◽  
Atomic Layer ◽  
Surface Modifications ◽  
Inverse Opal ◽  
Porous Structures ◽  
Layer Deposition

Abstract Atomic layer deposition (ALD) is effective in depositing conformal thin films, which is highly favorable for coating various patterned surfaces. These coatings serve as barrier layers in addition to surface modifications to improve wettability of porous structures, such as meshes and membrane channels. However, it has been challenging to conformally deposit hydrophilic thin films on three-dimensionally (3D) designed, more complicated architectures. To understand the effect of surface modifications on 3D structures’ surface properties, we deposit thin silica films via ALD on hydrophobic porous media, which is nickel inverse opal structures in this case. The silica thin film is used to improve hydrophilicity without modifying the geometries of the microporous structure such as porosity, pore size, and metal type. We study the consequences of applying silica coatings to the 3D structure in comparison to flat surface counterpart. The hydrophilicity effects of ALD coating on porous structures and flat nickel surfaces are approximately the same with a result of decreasing apparent static contact angle of approximately 30°. In relation, the Fowkes method reveals the surface energy of the ALD silica samples increases by a factor of 1.3. Thermal stability of the coating is tested, revealing a relative degradation with increasing thermal cycling, most likely associated with the adsorption species on the thin film surface. The droplet spreading rate is analyzed in addition to droplet volume loss to estimate the liquid penetration rate into the structure, if any. Condensation rate and condensate growth show that despite having lower droplet nucleation in comparison to a flat surface, the droplet area growth on inverse opal regions is larger. These findings showcase potential improvements to 3D microporous structures by employing ALD coating for fluid transport through the porous media.

Sign in / Sign up

Export Citation Format

Share Document