Interfacial Thermal Conductance and Thermal Rectification of Hexagonal BCnN/Graphene In-Plane Heterojunctions

2018 ◽  
Vol 122 (39) ◽  
pp. 22783-22789 ◽  
Author(s):  
Yingyan Zhang ◽  
Qing-Xiang Pei ◽  
Chien-Ming Wang ◽  
Chunhui Yang ◽  
Yong-Wei Zhang
Author(s):  
Ting Liang ◽  
Ping Zhang ◽  
Peng Yuan ◽  
Man Zhou ◽  
Siping Zhai

Abstract The in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures have received extensive attention in recent years due to their excellent physical properties and the development potential of next-generation nanoelectronic devices. Generally, different bonding types between Gr and h-BN are considered in different non-equilibrium molecular dynamics (NEMD) simulations studies. However, which type of bonding is most conducive to interface thermal transport is still very confusing. In this work, we investigate the interfacial thermal conductance (ITC) and the thermal rectification (TR) in five different bonding types of in-plane Gr/h-BN heterostructures by using NEMD simulations. It is found that the ITC depends strongly on the bonding strength and arrangement of different atoms across the boundary. Among the five different bonding types of heterostructures, the C-N bonded heterojunction exhibits the highest ITC due to its stronger interfacial bonding. The analyses on the strain distribution indicated that a low interfacial stress level at the interface junction, may facilitate the heat conduction, thus leading to a higher ITC. In addition, we found that TR occurs in all five bonded heterostructures, and the C-B bonded heterojunction possesses the highest TR factor. The present study is of significance for understanding the thermal transport behavior of Gr/h-BN heterostructures and promoting their future applications in thermal management and thermoelectric devices.


2016 ◽  
Vol 49 (46) ◽  
pp. 465301 ◽  
Author(s):  
Ying-Yan Zhang ◽  
Qing-Xiang Pei ◽  
Yiu-Wing Mai ◽  
Siu-Kai Lai

Carbon ◽  
2019 ◽  
Vol 144 ◽  
pp. 109-115 ◽  
Author(s):  
Zhiyong Wei ◽  
Fan Yang ◽  
Kedong Bi ◽  
Juekuan Yang ◽  
Yunfei Chen

Author(s):  
Hasan Babaei ◽  
Pawel Keblinski ◽  
J. M. Khodadadi

By utilizing molecular dynamics (MD) simulations, we study the interfacial thermal conductance at the interface of graphene and paraffin. In doing so, we conduct non-equilibrium heat source and sink simulations on systems of parallel and perpendicular configurations in which the heat flow is parallel and perpendicular to the surface of graphene, respectively. For the perpendicular configuration, graphene with different number of layers are considered. The results show that the interfacial thermal conductance decreases with the number of layers and converges to a value which is equal to the obtained conductance by using the parallel configuration. We also study the conductance for the solid phase paraffin. The results indicate that solid paraffin-graphene interfaces have higher conductance values with respect to the corresponding liquid phase systems.


2020 ◽  
Vol 2 (12) ◽  
pp. 5821-5832
Author(s):  
Hamidreza Zobeiri ◽  
Nicholas Hunter ◽  
Ridong Wang ◽  
Xinman Liu ◽  
Hong Tan ◽  
...  

Interfacial thermal conductance between a nm-thick suspended WS2 film and water is measured using a novel nET-Raman technique. By significantly reducing the effect of water thermal resistance, the interface resistance effect become more preeminent.


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