Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene nanoribbon-silicon interfaces

2013 ◽  
Vol 113 (6) ◽  
pp. 064311 ◽  
Author(s):  
Ajit K. Vallabhaneni ◽  
Bo Qiu ◽  
Jiuning Hu ◽  
Yong P. Chen ◽  
Ajit K. Roy ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Thermal Conductance ◽  
Graphene Nanoribbon ◽  
Thermal Rectification ◽  
Interfacial Thermal Conductance ◽  
Conductance Limit

Interfacial Thermal Conductance and Thermal Rectification of Hexagonal BCnN/Graphene In-Plane Heterojunctions

2018 ◽  
Vol 122 (39) ◽  
pp. 22783-22789 ◽  
Author(s):  
Yingyan Zhang ◽  
Qing-Xiang Pei ◽  
Chien-Ming Wang ◽  
Chunhui Yang ◽  
Yong-Wei Zhang
Keyword(s):  
Thermal Conductance ◽  
Thermal Rectification ◽  
Interfacial Thermal Conductance

Interfacial thermal conductance between silicon and a vertical carbon nanotube

2008 ◽  
Vol 104 (8) ◽  
pp. 083503 ◽  
Author(s):  
Ming Hu ◽  
Pawel Keblinski ◽  
Jian-Sheng Wang ◽  
Nachiket Raravikar
Keyword(s):  
Carbon Nanotube ◽  
Thermal Conductance ◽  
Interfacial Thermal Conductance

Interfacial Thermal Conductance and Thermal Rectification Across In-Plane Graphene/h-BN Heterostructures With Different Bonding Types

2019 ◽  
Author(s):  
Ting Liang ◽  
Ping Zhang ◽  
Peng Yuan ◽  
Man Zhou ◽  
Siping Zhai
Keyword(s):  
Thermal Management ◽  
Thermal Transport ◽  
Strain Distribution ◽  
Hexagonal Boron Nitride ◽  
Thermal Conductance ◽  
Interfacial Stress ◽  
Thermal Rectification ◽  
Nanoelectronic Devices ◽  
Interfacial Thermal Conductance ◽  
Non Equilibrium Molecular Dynamics

Abstract The in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures have received extensive attention in recent years due to their excellent physical properties and the development potential of next-generation nanoelectronic devices. Generally, different bonding types between Gr and h-BN are considered in different non-equilibrium molecular dynamics (NEMD) simulations studies. However, which type of bonding is most conducive to interface thermal transport is still very confusing. In this work, we investigate the interfacial thermal conductance (ITC) and the thermal rectification (TR) in five different bonding types of in-plane Gr/h-BN heterostructures by using NEMD simulations. It is found that the ITC depends strongly on the bonding strength and arrangement of different atoms across the boundary. Among the five different bonding types of heterostructures, the C-N bonded heterojunction exhibits the highest ITC due to its stronger interfacial bonding. The analyses on the strain distribution indicated that a low interfacial stress level at the interface junction, may facilitate the heat conduction, thus leading to a higher ITC. In addition, we found that TR occurs in all five bonded heterostructures, and the C-B bonded heterojunction possesses the highest TR factor. The present study is of significance for understanding the thermal transport behavior of Gr/h-BN heterostructures and promoting their future applications in thermal management and thermoelectric devices.

Interfacial thermal conductance in multilayer graphene/phosphorene heterostructure

2016 ◽  
Vol 49 (46) ◽  
pp. 465301 ◽  
Author(s):  
Ying-Yan Zhang ◽  
Qing-Xiang Pei ◽  
Yiu-Wing Mai ◽  
Siu-Kai Lai
Keyword(s):  
Thermal Conductance ◽  
Multilayer Graphene ◽  
Interfacial Thermal Conductance
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