Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications

2020 ◽  
Vol 116 (14) ◽  
pp. 142105
Author(s):  
Lei Li ◽  
Aozora Fukui ◽  
Akio Wakejima
1998 ◽  
Vol 120 (3) ◽  
pp. 280-289 ◽  
Author(s):  
T. J. Lu ◽  
A. G. Evans ◽  
J. W. Hutchinson

The role of the substrate in determining heat dissipation in high power electronics is calculated, subject to convective cooling in the small Biot number regime. Analytical models that exploit the large aspect ratio of the substrate to justify approximations are shown to predict the behavior with good accuracy over a wide range of configurations. The solutions distinguish heat spreading effects’ that enable high chip-level power densities from insulation effects that arise at large chip densities. In the former, the attributes of high thermal conductivity are apparent, especially when the substrate dimensions are optimized. Additional benefits that derive from a thin layer of a high thermal conductivity material (such as diamond) are demonstrated. In the insulating region, which arises at high overall power densities, the substrate thermal conductivity has essentially no effect on the heat dissipation. Similarly, for compact multichip module designs, with chips placed on both sides of the substrate, heat dissipation is insensitive to the choice of the substrate material, unless advanced cooling mechanisms are used to remove heat around the module perimeter.


2019 ◽  
Vol 2019 (1) ◽  
pp. 000131-000138
Author(s):  
Nagaraja Shashidhar ◽  
Abhijit Rao

Abstract Alumina and aluminum nitride substrates are routinely used in micro-electronic packaging where large quantity of heat needs to be dissipated, such as in LED packaging, high power electronics and laser packaging. Heat management in high power electronics or LED's is crucial for their lifespan and reliability. The ever-increasing need for higher power keeps challenging the packaging engineers to become more sophisticated in their packaging. With the availability of a 40 μm thick, high thermal conductivity ribbon alumina from Corning, the options available for packaging engineers has widened. This product has very high dielectric breakdown (~10kV at 40 μm thick), high thermal conductivity (>36 W/mK) and is rugged enough to be handled (with components attached) during packaging. These characteristics make ribbon alumina a cost-effective alternative to incumbent materials such as thick aluminum nitride, for use in high power microelectronics packaging. In this paper, high power LED and IGBT modules are modeled using commercially available code from ANSYS®. A geometry representative of typical LED packaging and IGBT packaging is constructed with Ansys Design Modeler platform and the allied meshing is done employing in-built Meshing tool in ANSYS Workbench®. We show that packaging with ~40 μm ribbon alumina delivers performance on par with or better than packaging with thicker aluminum nitride substrates.


2019 ◽  
Vol 1309 ◽  
pp. 012016
Author(s):  
A D Kurilov ◽  
V V Belyaev ◽  
K D Nessemon ◽  
E D Besprozvannyi ◽  
A O Osin ◽  
...  

2018 ◽  
Vol 52 (2) ◽  
pp. 025103 ◽  
Author(s):  
J Oliva ◽  
A I Mtz-Enriquez ◽  
A I Oliva ◽  
R Ochoa-Valiente ◽  
C R Garcia ◽  
...  

2016 ◽  
Vol 19 (6) ◽  
pp. 441-450 ◽  
Author(s):  
Yuka Yamada ◽  
Hiroshi Hohjo ◽  
Hidehiko Kimura ◽  
Atsushi Kawamoto ◽  
Tadayoshi Matsumori ◽  
...  

2020 ◽  
Vol 56 (3) ◽  
pp. 2241-2274
Author(s):  
S. Q. Jia ◽  
F. Yang

Abstract Copper/diamond composites have drawn lots of attention in the last few decades, due to its potential high thermal conductivity and promising applications in high-power electronic devices. However, the bottlenecks for their practical application are high manufacturing/machining cost and uncontrollable thermal performance affected by the interface characteristics, and the interface thermal conductance mechanisms are still unclear. In this paper, we reviewed the recent research works carried out on this topic, and this primarily includes (1) evaluating the commonly acknowledged principles for acquiring high thermal conductivity of copper/diamond composites that are produced by different processing methods; (2) addressing the factors that influence the thermal conductivity of copper/diamond composites; and (3) elaborating the interface thermal conductance problem to increase the understanding of thermal transferring mechanisms in the boundary area and provide necessary guidance for future designing the composite interface structure. The links between the composite’s interface thermal conductance and thermal conductivity, which are built quantitatively via the developed models, were also reviewed in the last part.


Energies ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 5851
Author(s):  
Shuang Wu ◽  
Jifen Wang ◽  
Huaqing Xie ◽  
Zhixiong Guo

The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.


2014 ◽  
Vol 47 (35) ◽  
pp. 355303 ◽  
Author(s):  
K Ait Aissa ◽  
N Semmar ◽  
A Achour ◽  
Q Simon ◽  
A Petit ◽  
...  

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