Accumulated Charge Measurement: Control of the Interfacial Depletion Layer by Offset Voltage and Estimation of Band Gap and Electron Injection Barrier

2021 ◽  
Author(s):  
Sunao Shimomoto ◽  
Tomofumi Kadoya ◽  
Toshiaki Tanimura ◽  
Kazusuke Maenaka ◽  
Tokuji Yokomatsu ◽  
...  
Keyword(s):  
Band Gap ◽  
Electron Injection ◽  
Depletion Layer ◽  
Charge Measurement ◽  
Offset Voltage ◽  
Measurement Control ◽  
Injection Barrier

Control of Electron Injection Barrier by Electron Doping of Metal Phthalocyanines

2010 ◽  
Vol 114 (28) ◽  
pp. 12258-12264 ◽  
Author(s):  
Pierluigi Gargiani ◽  
Antonio Calabrese ◽  
Carlo Mariani ◽  
Maria Grazia Betti
Keyword(s):  
Electron Injection ◽  
Metal Phthalocyanines ◽  
Electron Doping ◽  
Injection Barrier

Estimation of hole injection barrier at the poly-3(hexylthiophene)/metal interface using accumulated charge measurement

2017 ◽  
Vol 51 ◽  
pp. 162-167 ◽  
Author(s):  
Hiroyuki Tajima ◽  
Naoto Yasukawa ◽  
Hisaki Nakatani ◽  
Seiichi Sato ◽  
Tomofumi Kadoya ◽  
...  
Keyword(s):  
Hole Injection ◽  
Metal Interface ◽  
Charge Measurement ◽  
Injection Barrier

Charge transfer properties of phthalocyaninato zinc complexes for organic field-effect transistors: tuning semiconductor nature via peripheral substituents

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Zinc Complexes ◽  
Hole Injection ◽  
Type Semiconductor ◽  
P Type ◽  
Injection Barrier

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.

scholarly journals Functionalized Zinc Porphyrins with Various Peripheral Groups for Interfacial Electron Injection Barrier Control in Organic Light Emitting Diodes

ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 10008-10018 ◽  
Author(s):  
Apostolis Verykios ◽  
Michael Papadakis ◽  
Anastasia Soultati ◽  
Maria-Christina Skoulikidou ◽  
George Papaioannou ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Zinc Porphyrins ◽  
Injection Barrier

Graphene Adsorbed on Corundum Surface: Clean Interface and Band Gap Opening

2012 ◽  
Vol 1407 ◽  
Author(s):  
Bing Huang ◽  
Qiang Xu ◽  
Su-Huai Wei
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
First Principles Calculations ◽  
Structural And Electronic Properties ◽  
Gap Opening ◽  
Clean Interface ◽  
Injection Barrier ◽  
Gate Dielectric Material

ABSTRACTUsing advanced first-principles calculations, we have studied the structural and electronic properties of graphene/α-Al2O3 interfaces and show that α -Al2O3 is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of ~180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which is significantly larger than graphene on other popular substrates.

Photoelectron Spectroscopic Study of C12A7:e-and Alq3Interface:  The Formation of a Low Electron-Injection Barrier

2007 ◽  
Vol 111 (24) ◽  
pp. 8403-8406 ◽  
Author(s):  
Ki-Beom Kim ◽  
Maiko Kikuchi ◽  
Masashi Miyakawa ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Electron Injection ◽  
Injection Barrier
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