Photoelectron Spectroscopic Study of C12A7:e-and Alq3Interface:  The Formation of a Low Electron-Injection Barrier

2007 ◽  
Vol 111 (24) ◽  
pp. 8403-8406 ◽  
Author(s):  
Ki-Beom Kim ◽  
Maiko Kikuchi ◽  
Masashi Miyakawa ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Electron Injection ◽  
Injection Barrier

Control of Electron Injection Barrier by Electron Doping of Metal Phthalocyanines

2010 ◽  
Vol 114 (28) ◽  
pp. 12258-12264 ◽  
Author(s):  
Pierluigi Gargiani ◽  
Antonio Calabrese ◽  
Carlo Mariani ◽  
Maria Grazia Betti
Keyword(s):  
Electron Injection ◽  
Metal Phthalocyanines ◽  
Electron Doping ◽  
Injection Barrier

Charge transfer properties of phthalocyaninato zinc complexes for organic field-effect transistors: tuning semiconductor nature via peripheral substituents

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Zinc Complexes ◽  
Hole Injection ◽  
Type Semiconductor ◽  
P Type ◽  
Injection Barrier

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.

scholarly journals Functionalized Zinc Porphyrins with Various Peripheral Groups for Interfacial Electron Injection Barrier Control in Organic Light Emitting Diodes

ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 10008-10018 ◽  
Author(s):  
Apostolis Verykios ◽  
Michael Papadakis ◽  
Anastasia Soultati ◽  
Maria-Christina Skoulikidou ◽  
George Papaioannou ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Zinc Porphyrins ◽  
Injection Barrier

White polymer light emitting diodes based on PVK: the effect of the electron injection barrier on transport properties, electroluminescence and controlling the electroplex formation

2016 ◽  
Vol 18 (48) ◽  
pp. 33077-33084 ◽  
Author(s):  
Dipjyoti Das ◽  
Peddaboodi Gopikrishna ◽  
Rahul Narasimhan ◽  
Ashish Singh ◽  
Anamika Dey ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Light Emitting Diodes ◽  
Electron Injection ◽  
Light Emitting ◽  
Emissive Layer ◽  
Polymer Light Emitting Diodes ◽  
Injection Barrier

The influence of the electron injection barrier on charge transport, brightness and EL properties of WPLEDs with PVK as an emissive layer has been reported.

Electron injection barrier reduction for organic light-emitting devices by quinacridone derivatives

2010 ◽  
Vol 46 (43) ◽  
pp. 8210 ◽  
Author(s):  
Toan V. Pho ◽  
Peter Zalar ◽  
Andres Garcia ◽  
Thuc-Quyen Nguyen ◽  
Fred Wudl
Keyword(s):  
Electron Injection ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
Injection Barrier

Effect of Electron Injection Layer on the Parasitic Recombination at the Hole Transport Layer/Quantum Dot Interface in Quantum Dot Light-Emitting Diodes

2020 ◽  
Vol 20 (7) ◽  
pp. 4364-4367 ◽  
Author(s):  
Da-Young Park ◽  
Jae-Hoon Lim ◽  
Bum-Joo Lee ◽  
Dae-Gyu Moon
Keyword(s):  
Quantum Dot ◽  
Current Efficiency ◽  
Zno Nanoparticles ◽  
Electron Injection ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Electron ◽  
Injection Barrier

Zinc oxide (ZnO) nanoparticles layers are used as a substitute for organic electron transport layer due to high electron mobility, higher thermal stability and less sensitivity to the oxygen/moisture. In this study, we investigated the electron injection properties of ZnO nanoparticles in QLED compared with TPBi commonly used as injection layer in OLEDs. The expected electron injection barrier from energy diagram is similar in both devices, but the current density of the ZnO injection layer was slightly high compared with the TPBi injection layer. The current efficiency of ZnO and TPBi devices were 5.21 cd/A and 2.24 cd/A, respectively. The current efficiency of TPBi device is below half of ZnO device. We found that the electron–hole recombination occurs not only in the QD but also in the poly-TPD for TPBi device.

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