Improving Bias-Stress Stability of p-Type Organic Field-Effect Transistors by Constructing an Electron Injection Barrier at the Drain Electrode/Semiconductor Interfaces

2020 ◽  
Vol 12 (37) ◽  
pp. 41886-41895
Author(s):  
Zhenxin Yang ◽  
Chunhua Guo ◽  
Changsheng Shi ◽  
Deng-Ke Wang ◽  
Tao Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
Semiconductor Interfaces ◽  
Drain Electrode ◽  
P Type ◽  
Injection Barrier

Charge transfer properties of phthalocyaninato zinc complexes for organic field-effect transistors: tuning semiconductor nature via peripheral substituents

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Zinc Complexes ◽  
Hole Injection ◽  
Type Semiconductor ◽  
P Type ◽  
Injection Barrier

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Bias stress effect in polyelectrolyte-gated organic field-effect transistors

2013 ◽  
Vol 102 (11) ◽  
pp. 113306 ◽  
Author(s):  
H. Sinno ◽  
S. Fabiano ◽  
X. Crispin ◽  
M. Berggren ◽  
I. Engquist
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Organic Field Effect Transistors ◽  
Bias Stress

Rubidium carbonate modified gold electrodes for efficient electron injection in n-type organic field-effect transistors

2014 ◽  
Vol 47 (35) ◽  
pp. 355101 ◽  
Author(s):  
Amit Kumar ◽  
Akshaya K Palai ◽  
Dongmyung Yang ◽  
Sungwoo Cho ◽  
Seung-un Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Gold Electrodes ◽  
Organic Field Effect Transistors

Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

2012 ◽  
Vol 100 (1) ◽  
pp. 013303 ◽  
Author(s):  
Peter Darmawan ◽  
Takeo Minari ◽  
Akichika Kumatani ◽  
Yun Li ◽  
Chuan Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Charge Injection Barrier ◽  
Injection Barrier

Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors

2017 ◽  
Vol 9 (39) ◽  
pp. 34153-34161 ◽  
Author(s):  
Hyun Ho Choi ◽  
Hikmet Najafov ◽  
Nikolai Kharlamov ◽  
Denis V. Kuznetsov ◽  
Sergei I. Didenko ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effect ◽  
Organic Field Effect Transistors ◽  
Bias Stress

Bias-stress effects in organic field-effect transistors based on self-assembled monolayer nanodielectrics

2011 ◽  
Vol 13 (32) ◽  
pp. 14387 ◽  
Author(s):  
Florian Colléaux ◽  
James M. Ball ◽  
Paul H. Wöbkenberg ◽  
Peter J. Hotchkiss ◽  
Seth R. Marder ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Stress Effects ◽  
Bias Stress ◽  
Self Assembled

Comparison of p-type and n-type organic field-effect transistors using nickel coordination compounds

2006 ◽  
Vol 421 (4-6) ◽  
pp. 395-398 ◽  
Author(s):  
Tomohiro Taguchi ◽  
Hiroshi Wada ◽  
Takuya Kambayashi ◽  
Bunpei Noda ◽  
Masanao Goto ◽  
...  
Keyword(s):  
Coordination Compounds ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
P Type
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