Thermal Selective Vapor Etching of TiO2: Chemical Vapor Etching via WF6 and Self-Limiting Atomic Layer Etching Using WF6 and BCl3

2017 ◽  
Vol 29 (16) ◽  
pp. 6653-6665 ◽  
Author(s):  
Paul C. Lemaire ◽  
Gregory N. Parsons
Keyword(s):  
Chemical Vapor ◽  
Atomic Layer ◽  
Chemical Vapor Etching ◽  
Atomic Layer Etching

Digital Process for advanced VLSI's and Surface Reaction Study

1991 ◽  
Vol 222 ◽  
Author(s):  
H. Sakaue ◽  
K. Asami ◽  
T. Ichihara ◽  
S. Ishizuka ◽  
K. Kawamura ◽  
...  
Keyword(s):  
Surface Reaction ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Nitride Film ◽  
Deep Trench ◽  
Organic Species ◽  
Atr Spectroscopy ◽  
Reaction Cycles ◽  
Atomic Layer Etching ◽  
Cl Atoms

ABSTRACTDigital etching was carried out by repeating the fundamental reaction cycles of adsorption, reaction and desorption for fluorine(F) or chlorine(Cl)/Si systems. In the F/Si case, atomic layer etching of Si(100) was achieved by adsorption of F atoms produced by a remote discharge of F2/99.8%He on the cooled Si surface and subsequent Ar* ion (≅20eV) irradiation. The digital method revealed that the cryogenic etching occurred by ion bombardment on physiosorbed F atoms on the cooled Si surface. Adsorption of Cl atoms on Si at room temperature allowed self-limiting reaction with etch rate of 0.4 Å/cycle. The etching increased rapidly over 40 V of substrate voltage. Secondly, reaction of TES (triethylsilane) with hydrogen(H) atoms was also found to lead to conformal CVD (Chemical Vapor Deposition) of Si film involving organic species. Then Si oxide and nitride films were formed by digital CVD which repeated a cycle of first deposition of this film and subsequent its oxidation and nitridation. The electrically excellent multilayer stacked oxide and nitride film was filled in to deep trench. Insitu FTIR-ATR spectroscopy demonstrated that the surface reaction was predominant for the TES/H process.

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

2013 ◽  
Vol 31 (6) ◽  
pp. 061310 ◽  
Author(s):  
Jong Kyu Kim ◽  
Sung Il Cho ◽  
Sung Ho Lee ◽  
Chan Kyu Kim ◽  
Kyung Suk Min ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Atomic Layer ◽  
Contact Layer ◽  
Layer Removal ◽  
Atomic Layer Etching

Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

2014 ◽  
Vol 105 (9) ◽  
pp. 093104 ◽  
Author(s):  
Young I. Jhon ◽  
Kyung S. Min ◽  
G. Y. Yeom ◽  
Young Min Jhon
Keyword(s):  
Atomic Layer ◽  
Neutral Beam ◽  
Al2o3 Film ◽  
Time Resolved ◽  
Atomic Layer Etching

(Invited) Volatile Products during Thermal Atomic Layer Etching of Metal Oxides and Elemental Metals

2021 ◽  
Vol MA2021-01 (21) ◽  
pp. 844-844
Author(s):  
Ann Lii-Rosales ◽  
Virginia Johnson ◽  
Sandeep Sharma ◽  
Andrew S Cavanagh ◽  
Steven M George
Keyword(s):  
Metal Oxides ◽  
Atomic Layer ◽  
Volatile Products ◽  
Atomic Layer Etching

Prediction and Validation of the Process Window for Atomic Layer Etching: HF Exposure on TiO2

2021 ◽  
Author(s):  
Suresh Kondati Natarajan ◽  
Austin M. Cano ◽  
Jonathan L. Partridge ◽  
Steven M. George ◽  
Simon D. Elliott
Keyword(s):  
Atomic Layer ◽  
Process Window ◽  
Atomic Layer Etching
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