Digital Process for advanced VLSI's and Surface Reaction Study

1991 ◽  
Vol 222 ◽  
Author(s):  
H. Sakaue ◽  
K. Asami ◽  
T. Ichihara ◽  
S. Ishizuka ◽  
K. Kawamura ◽  
...  
Keyword(s):  
Surface Reaction ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Nitride Film ◽  
Deep Trench ◽  
Organic Species ◽  
Atr Spectroscopy ◽  
Reaction Cycles ◽  
Atomic Layer Etching ◽  
Cl Atoms

ABSTRACTDigital etching was carried out by repeating the fundamental reaction cycles of adsorption, reaction and desorption for fluorine(F) or chlorine(Cl)/Si systems. In the F/Si case, atomic layer etching of Si(100) was achieved by adsorption of F atoms produced by a remote discharge of F2/99.8%He on the cooled Si surface and subsequent Ar* ion (≅20eV) irradiation. The digital method revealed that the cryogenic etching occurred by ion bombardment on physiosorbed F atoms on the cooled Si surface. Adsorption of Cl atoms on Si at room temperature allowed self-limiting reaction with etch rate of 0.4 Å/cycle. The etching increased rapidly over 40 V of substrate voltage. Secondly, reaction of TES (triethylsilane) with hydrogen(H) atoms was also found to lead to conformal CVD (Chemical Vapor Deposition) of Si film involving organic species. Then Si oxide and nitride films were formed by digital CVD which repeated a cycle of first deposition of this film and subsequent its oxidation and nitridation. The electrically excellent multilayer stacked oxide and nitride film was filled in to deep trench. Insitu FTIR-ATR spectroscopy demonstrated that the surface reaction was predominant for the TES/H process.

Digital Chemical Vapor Deposition of Silicon Oxide/Nitride and its Surface Reaction Study

1992 ◽  
Vol 284 ◽  
Author(s):  
H. Sakaue ◽  
T. Nakasako ◽  
K. Nakaune ◽  
T. Kusuki ◽  
A. Miki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
In Situ Ftir ◽  
Deep Trench ◽  
Organic Species ◽  
Ftir Studies

ABSTRACTIn order to fill high quality insulators into narrower spaces in advanced metallizationthe digital CVD (Chemical Vapor Deposition) of multilayer stacked Si oxide and nitride films was studied. Reaction of TES (triethylsilane) with hydrogen (H) atoms was also found to lead to conformal CVD of Si film involving organic species. This reaction took place only on the surface reaction. In-situ FTIR studies reveal that H atoms react with Si-C2H5 bonds in TES and thus generate strong Si-CH3 bonds and weak Si-H bonds, thereby liberating H2 and forming the organic Si film on the surface, and the surface reaction is dominated by the thermal effect from the substrate. Then Si oxide or nitride films were formed by the digitaCVD which repeated a cycle of deposition of this film with subsequent oxidation or nitridation. Oxide film integrity was improved greatly by removing included organic bonds in the TES/H reaction film by exposing the film to H atoms before the oxidation step. Thus electrically excellent multilayer stacked oxide and nitride films were obtained in a deep trench.

A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film

2006 ◽  
Vol 914 ◽  
Author(s):  
Kenichi Sekimoto ◽  
Taishi Furukawa ◽  
Noriaki Oshima ◽  
Ken-ichi Tada ◽  
Tetsu Yamakawa
Keyword(s):  
Argon Plasma ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Decomposition Temperature ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Composition Analysis ◽  
1H And 13C Nmr ◽  
Layer Deposition ◽  
Tantalum Films

AbstractA novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

2013 ◽  
Vol 31 (6) ◽  
pp. 061310 ◽  
Author(s):  
Jong Kyu Kim ◽  
Sung Il Cho ◽  
Sung Ho Lee ◽  
Chan Kyu Kim ◽  
Kyung Suk Min ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Atomic Layer ◽  
Contact Layer ◽  
Layer Removal ◽  
Atomic Layer Etching
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