Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method

2000 ◽  
Vol 18 (4) ◽  
pp. 1595-1598 ◽  
Author(s):  
Hyeongtag Jeon ◽  
June-Woo Lee ◽  
Young-Do Kim ◽  
Deok-Soo Kim ◽  
Kyoung-Soo Yi
2012 ◽  
Vol 1406 ◽  
Author(s):  
Y. Muraoka ◽  
S. Yoshida ◽  
T. Wakita ◽  
M. Hirai ◽  
T. Yokoya

ABSTRACTWe have examined the intrinsic surface physical property of a CrO2 thin film by means of surface sensitive photoemission spectroscopy. Epitaxial thin film of CrO2(100) has been grown on TiO2(100) by a closed chemical vapor deposition method using a Cr8O21 precursor. Low-energy electron diffraction (LEED) observations find that epitaxial growth of rutile-phase CrO2 occurs to the top monolayer of the film. Surface sensitive x-ray photoemission spectroscopy (XPS) measurements show a finite intensity in the region of the Fermi energy. The result evidences that the physical nature of near topmost layer of CrO2 thin film is metallic. Progress of understanding of the surface physical property of CrO2 thin film helps not only perform a reliable photoemission study to understand the physics of ferromagnetic metal in CrO2, but also develop the CrO2-based devices using a half-metallic nature for spintronics applications.


Author(s):  
Yong He ◽  
Yao-hui Zhu ◽  
Min Zhang ◽  
Juan Du ◽  
Wen-hui Guo ◽  
...  

Very recently, the septuple-atomic-layer, MoSi2N4 has been successfully synthesized by chemical vapor deposition method. However, pristine MoSi2N4 exhibits some shortcomings, including poor visible-light harvesting and low separation rate of photo-excited...


2021 ◽  
pp. 138799
Author(s):  
Phung Dinh Hoat ◽  
Hwi-Hon Ha ◽  
Pham Tien Hung ◽  
Vu Xuan Hien ◽  
Sangwook Lee ◽  
...  

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